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w-cdma n-cdma Datasheet PDF File

For w-cdma n-cdma Found Datasheets File :: 2187 Search Time::3ms
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				NXP Semiconductors Philips Semiconductors
Part No.	BLF2022-125
OCR Text	... transistor FEATURES * Typical w-cdma performance at a supply voltage of 28 V and IDQ of 1 A - Output power = 20 W (AV) - Gain = 12 dB - Efficiency = 19% - ACPR = -42 dBc at 3.84 MHz * Easy power control * Excellent ruggedness * High power...
Description	UHF power LDMOS transistor
File Size	44.28K / 8 Page	View it Online	Download Datasheet

				Conexant Systems Inc
Part No.	CX72300
OCR Text	wireless communications products Dual Fractional-N Synthesizer PLL FamilyTM CX72300/CX72301/ CX72302 and CX74038 Conexant's synth...CDMA. This feature enables such applications to send a signal and quickly reset to send another sign...
Description	Analog IC - Datasheet Reference From old datasheet system
File Size	167.02K / 2 Page	View it Online	Download Datasheet

				Motorola
Part No.	MHVIC915R2
OCR Text	...Hz, 26 Volts Output Power -- 15 W P1dB Power Gain -- 30 dB @ P1dB Drain Efficiency = 56% @ P1dB * On-Chip Matching (50 Ohm Input, >9 Ohm Out...CDMA, GSM/GSM EDGE 746-960 MHz, 15 W, 27 V RF LDMOS WIDEBAND INTEGRATED AMPLIFIER CASE 978-03 PFP...
Description	CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
File Size	463.26K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRF19085R3 MRF19085 MRF19085LR3 MRF19085SR3 MRF19085LSR3
OCR Text	...5SR3 MRF19085LSR3 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI...CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. C...
Description	RF Power Field Effect Transistors
File Size	581.22K / 12 Page	View it Online	Download Datasheet

				Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6S9045 MRF6S9045NR1 MRF6S9045MBR1 MRF6S9045MR1 MRF6S9045NBR1
OCR Text	...R1 MRF6S9045MBR1 880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9045NR1(MR1) CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9045NBR1(MBR1)...
Description	RF Power Field Effect Transistors
File Size	524.99K / 16 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF9936
OCR Text	... Product Description N E ro W d .050 .016 .010 .008 Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS ! Package Style: SSOP-24 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Complete Receiver Front-End ...
Description	RF MIXER,GAAS,SSOP,24PIN,PLASTIC From old datasheet system
File Size	242.24K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BGA612
OCR Text	... Unit V mA mA dBm mW C C C K/W Electrical Characteristics at TA=25C (measured in test circuit specified in fig. 1) VCC=5V, RBias=135, Frequency=2GHz, unless otherwise specified Parameter Insertion power gain f = 0.1GHz f = 1.0GHz f = ...
Description	Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343 Silicon Germanium Broadband MMIC Amplifier
File Size	489.32K / 8 Page	View it Online	Download Datasheet

				MOTOROLA INC Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MW4IC915NBR1 MW4IC915MBR1 MW4IC915GNBR1 MW4IC915GMBR1
OCR Text	...GSM, GSM EDGE, TDMA, n-cdma and w-cdma. Final Application * Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 15 Watts CW, Full Frequency Band (860-960 MHz) Power Gain -- 30 dB Power Added Efficiency -- 44% Driver App...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	330.77K / 16 Page	View it Online	Download Datasheet

				Fujitsu Limited FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited. Fujitsu Microelectronics
Part No.	VC-3R0A231 VC-3R0A231750B VC-23 VC-3R0A230967B VC-3R0A23967B VC-3R0A23
OCR Text	...1000 pcs/reel Type : (L) 340 x (W) 340 x (t) 30 (mm) Dimensions in mm 13.0 0.3 9 VC-23 Series s REFLOW MOUNTING CONDITIONS (RECOMMENDED) * Perform mounting using the temperature profile shown below. To prevent thermal stress to ...
Description	ASSP for Mobile Telephone VCO (800 to 2000 MHz)
File Size	48.54K / 11 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC356LP3
OCR Text	...erating Temperature 150 C 0.910 W Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 103 104 105 8 AMPLIFIERS - SMT 8 - 121 71.4 C/W -65 to +150 C -40 to +85 C Outline Drawing NOTES: 1. MATERIAL PACKAGE BODY:...
Description	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz
File Size	311.26K / 6 Page	View it Online	Download Datasheet

For w-cdma n-cdma Found Datasheets File :: 2187 Search Time::3ms
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