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  wear-resistance Datasheet PDF File

For wear-resistance Found Datasheets File :: 922    Search Time::1.891ms    
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    E909.01

ELMOS Semiconductor AG
Part No. E909.01
OCR Text ... Resistance against mechanical wear no All IR transparent colors and surface possible Operation under humid conditions restrict...Resistance against chemicals and liquids restricted 2 /39 Touch of surface suf- Certain force...
Description DESIGNING SYSTEMS WITH HALIOS㈢ SWITCH

File Size 1,441.35K  /  39 Page

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    S7199-01

Hamamatsu Corporation
Part No. S7199-01
OCR Text ...ing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * Avoid directly placing these sensors on a work-desk or wor...
Description CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging

File Size 139.33K  /  7 Page

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    S8658-01

Hamamatsu Corporation
Part No. S8658-01
OCR Text ...ing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * Avoid directly placing these sensors on a work-desk or wor...
Description Front-illuminated FFT-CCD for X-ray imaging

File Size 147.46K  /  7 Page

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    S8665-0909

Hamamatsu Corporation
Part No. S8665-0909
OCR Text ...ing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. G Avoid directly placing these sensors on a work-desk or wor...
Description CCD area image sensor Four-stage thermoelectric cooled, back-thinned FFT-CCD

File Size 181.92K  /  9 Page

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    S8844-0909

Hamamatsu Corporation
Part No. S8844-0909
OCR Text ...ing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. q Avoid directly placing these sensors on a work-desk or wor...
Description CCD area image sensor 512 × 512 pixels, Back-thinned FFT-CCD
CCD area image sensor 512 】 512 pixels, Back-thinned FFT-CCD

File Size 168.56K  /  9 Page

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    S8981-02 S8980

Hamamatsu Corporation
Part No. S8981-02 S8980
OCR Text ...ing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. *Avoid directly placing these sensors on a work-desk or work...
Description Front-illuminated FFT-CCDs for X-ray imaging

File Size 182.73K  /  7 Page

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    S8985-02 S8984

Hamamatsu Corporation
Part No. S8985-02 S8984
OCR Text ...ing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. *Avoid directly placing these sensors on a work-desk or work...
Description CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging

File Size 183.29K  /  7 Page

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    SSM3J108TU

Toshiba Semiconductor
Part No. SSM3J108TU
OCR Text ...tic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance RDS(ON) (m) Drain-Source on-resistance RDS(ON) (m) 300 250 200 150 100 50 0 -60 -4...
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

File Size 137.55K  /  5 Page

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    SSM3J109TU

Toshiba Semiconductor
Part No. SSM3J109TU
OCR Text ...tic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should...Resistance RDS (ON) (m) 200 -0.2 A Drain-Source ON-Resistance RDS (ON)() 200 -2.5 V,-0.5 A ...
Description Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications

File Size 195.32K  /  5 Page

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    SSM3J110TU

Toshiba Semiconductor
Part No. SSM3J110TU
OCR Text ...tic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance RDS(ON) (m) 160 140 120 100 80 60 40 20 0 -0 -1 -2 -3 -4 -5 -6 -7 -8 Gate-Source voltage ...
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

File Size 137.49K  /  5 Page

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For wear-resistance Found Datasheets File :: 922    Search Time::1.891ms    
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