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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI58N08 FQB58N08
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| OCR Text |
...s: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.23mH, IAS = 57.5A, VDD = 25V, RG = 25 , Starting TJ =...28.75 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 57.5A I(D) | TO-262AA
80V N-Channel MOSFET
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| File Size |
629.65K /
9 Page |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI32N20C FQB32N20C FQB32N20CTM
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| OCR Text |
...s: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.4mH, IAS = 32A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 28A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty ... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
907.72K /
9 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI28N15 FQB28N15
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| OCR Text |
...s: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.64mH, IAS = 28A, VDD = 25V, RG = 25 , Starting TJ = 2...28 A
0 -1 10
0 10
0
10
1
0
9
18
27
36
45
VDS, Drain-Source Voltage... |
| Description |
150V N-Channel MOSFET
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| File Size |
626.51K /
9 Page |
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it Online |
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United Monolithic Semic...
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| Part No. |
CHA4107-QDG-15
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| OCR Text |
...iescent) = 1 2 0ma, drain pulse width= 50 s, duty cycle = 10 % symbol parameter min typ max unit fop operating frequency ...28 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) linear gain (db) linear gain @ temp=25c -20 -18 -16 -14... |
| Description |
C-band Medium Power Amplifier
C-band Medium Power Amplifier
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| File Size |
395.19K /
12 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FQE10N20LC FQE10N20LCTU
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| OCR Text |
...s: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 30mH, IAS = 4.0A, VDD = 50V, RG = 25 , Starting TJ = 25...28
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Character... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V Logic N-Channel MOSFET 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
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| File Size |
892.33K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA7N65C
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| OCR Text |
... noted
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IG...28 4.5 12 ---400 3.3
50 110 190 120 36 ---
----
VDS = 520 V, ID = 7A, VGS = 10 V
(Note 4, ... |
| Description |
650V N-Channel MOSFET
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| File Size |
714.37K /
8 Page |
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it Online |
Download Datasheet |
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