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WINGS[Wing Shing Computer Components]
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| Part No. |
2SC5196
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| OCR Text |
...t)
Test Condition IC=5 mA IE=0 IC=10 mA RBE= IE=5mA IC=0 VCB=40V IE=0 VEB=4V IC=0 VCE=5V IC=1A VCE=5V IC=2A IC=3A IB=0.3A
Min 120 80 6
Typ
Max
Unit V V V mA mA
55 50
0.1 0.1 160 2.5
V V
Wing Shing Computer Compone... |
| Description |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
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| File Size |
23.42K /
1 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
2SC5810
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| OCR Text |
...t gain: hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-speed switching: tf = 85 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitt... |
| Description |
TOSHIBA Transistor Silicon NPN Epitaxial Type
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| File Size |
130.72K /
5 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SC5811
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| OCR Text |
0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
5.45
0.8
2.1
2SC5811
PW=20s D.C. 1% INPUT
IB1 OUTPUT IB2 VR 50 + 100F VBE= --2V + 470F VCC=200V RB
RL=66.7
... |
| Description |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
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| File Size |
40.10K /
3 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SC5813
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| OCR Text |
...ion through the tape packing
1 0.40+0.10 -0.05 3
1.50+0.25 -0.05 2.8+0.2 -0.3
Unit: mm
0.16+0.10 -0.06
2
(0.65)
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Em... |
| Description |
Silicon NPN epitaxial planar type
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| File Size |
66.05K /
3 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
2SC5819
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| OCR Text |
...t gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) Industrial Applications Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-bas... |
| Description |
High-Speed Switching Applications DC-DC Converter Applications
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| File Size |
124.17K /
6 Page |
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it Online |
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Renesas
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| Part No. |
2SC5998
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| OCR Text |
...G PG Min 110 11 Typ 150 2.0 0.95 11 22 13 28 70 Max 190 1.5 Unit pF pF GHz dB dB dBm % Test Conditions VCE = 3 V, IC = 100 mA VCB = 3 V, IE = 0, f = 1 MHz VCB = 3 V, f = 1 MHz, Emitter grounded VCE = 3.6 V, IC = 100 mA, f = 1 G... |
| Description |
Transistors>Amplifiers/Bipolar
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| File Size |
99.19K /
12 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD1485
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| OCR Text |
...to +155 Unit V V V A A W C C
0.7
s Features
15.00.3 11.00.2
5.00.2 3.2
21.00.5 15.00.2
3.20.1
2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collecto... |
| Description |
Silicon NPN triple diffusion planar type(For high power amplification)
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| File Size |
43.02K /
2 Page |
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it Online |
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SANYO
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| Part No. |
2SD1725
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| OCR Text |
...:mm 2043B
[2SB1168/2SD1725]
8.0 4.0 2.0 2.7
Features
* Low collector-to-emitter saturation voltage. * High fT. * Excellent linearity of hFE. * Short switching time.
1.6 0.8
1.5
0.6
15.5
0.8
3.0
9.0 11.0
0.5
1
... |
| Description |
NPN Epitaxial Planar Silicon Transistors Large Current Switching Applications
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| File Size |
57.61K /
6 Page |
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it Online |
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Price and Availability
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