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  0.0169 Datasheet PDF File

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    2SA1162

Galaxy Semi-Conductor Holdings Limited
Part No. 2SA1162
OCR Text ... NF Test conditions IC=-100A,IE=0 IC=-1mA,IB=0 B Production specification 2SA1162 MIN -50 -50 -5 -0.1 -0.1 70 400 -0.3 80 7 10 V MHz pF dB TYP MAX UNIT V V V A A IE=-100A,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-2mA IC=-100mA,...
Description Silicon Epitaxial Planar Transistor

File Size 243.73K  /  4 Page

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    2SA1585S

TRANSYS Electronics Limited
Part No. 2SA1585S
OCR Text ...ECTOR Power dissipation PD : 0.4W (Tamb=25) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=...
Description Plastic-Encapsulated Transistors

File Size 60.31K  /  1 Page

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    2SA1586W

Galaxy Semi-Conductor Holdings Limited
Part No. 2SA1586W
OCR Text ...Cob Test conditions IC=-100A,IE=0 IC=-1mA,IB=0 IE=-100A,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC= -1mA VCB=-10V,IE=0,f=1MHz 80 4 7 70 -0.1 MIN -50 -50 -5 -0.1 -0.1 400 -0.3 V MHz pF TYP MAX UNIT V V V...
Description PNP Silicon Epitaxial Planar Transistor

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    2SA1611W

Galaxy Semi-Conductor Holdings Limited
Part No. 2SA1611W
OCR Text ...Cob Test conditions IC=-100A,IE=0 IC=-1mA,IB=0 IE=-100A,IC=0 VCB=-60V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-1mA IC=-100mA, IB=-10mA VCE=-6V, IC= -10mA VCB=-10V,IE=0,f=1MHz 180 4.5 90 200 -0.18 MIN -60 -50 -5 -0.1 -0.1 600 -0.3 V MHz pF TYP MAX UNIT...
Description PNP Silicon Epitaxial Planar Transistor

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    2SA1843 2SA1843M 2SA1843L

NEC Corp.
Part No. 2SA1843 2SA1843M 2SA1843L
OCR Text ...FE and low VCE(sat): VCE(sat) -0.3 V @IC = -3.0 A, IB = -0.15 A hFE 100 @VCE = -2.0 V, IC = -1.0 A * Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter voltage Emitter to...
Description Silicon power transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 5A条一(c)|园区

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    2SA966

TRANSYS Electronics Limited
Part No. 2SA966
OCR Text 0.9 TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR W(Tamb=25) 3. BASE Collector current A ICM : -1.5 Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range TJ, Tstg: -55 to +150 123 ...
Description Plastic-Encapsulated Transistors

File Size 60.92K  /  1 Page

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    2SB624

Galaxy Semi-Conductor Holdings Limited
Part No. 2SB624
OCR Text ...Cob Test conditions IC=-100A,IE=0 IC=-1mA,IB=0 B Production specification 2SB624 MIN -30 -25 -5 -0.1 -0.1 110 50 -0.6 -0.7 160 17 V V MHz pF 400 TYP MAX UNIT V V V A A IE=-100A,IC=0 VCB=-30V,IE=0 VEB=-5V,IC=0 VCE=-1V,IC=-100mA VC...
Description Silicon Epitaxial Planar Transistor

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    2SB709A

Galaxy Semi-Conductor Holdings Limited
Part No. 2SB709A
OCR Text ...) fT Test conditions IC=-10A,IE=0 IC=-2mA,IB=0 B Production specification 2SB709A MIN -45 -45 -7 -0.1 -100 160 460 -0.5 60 V MHz TYP MAX UNIT V V V A A IE=-10A,IC=0 VCB=-20V,IE=0 VEB=-10V,IC=0 VCE=-10V,IC=-2mA IC=-100mA, IB=-10mA...
Description Silicon Epitaxial Planar Transistor

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    2SB985

TRANSYS Electronics Limited
Part No. 2SB985
OCR Text ...P MAX UNIT V V V Ic=-10A, IE=0 Ic=-1mA, IB=0 IE=-10A, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-3A IC=-2A, IB=-100mA IC=-2A, IB=-100mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz -60 -50 -6 -1 -1 100 40 -0.7 -1.2...
Description Plastic-Encapsulated Transistors

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    2SC1654

Galaxy Semi-Conductor Holdings Limited
Part No. 2SC1654
OCR Text ... Cob Test conditions IC=100A,IE=0 IC=1mA,IB=0 B Production specification 2SC1654 MIN 180 160 5 0.1 0.1 90 70 0.3 1 120 2.3 V V MHz pF 400 TYP MAX UNIT V V V A A IE=100A,IC=0 VCB=130V,IE=0 VEB=5V,IC=0 VCE=3V,IC=15mA VCE=3V,IC=5mA ...
Description Silicon Epitaxial Planar Transistor

File Size 275.60K  /  4 Page

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