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  0.62c w Datasheet PDF File

For 0.62c w Found Datasheets File :: 372    Search Time::2.875ms    
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. GCU08BA-130
OCR Text ... G (250) (85) (140) 0.2 7 K 160MIN 20MAX 60.5 60.5 (13.7) (1.6) A 14.51.3 10MIN 60.5 470.2 60.5 A PAR...62C VDM = 3/4 VDRM, VD = 3000V, LC = 0.3H (See Fig. 1, 3) Tj = 25/125C One half cycle at 60Hz, Tj = ...
Description MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT

File Size 60.32K  /  6 Page

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    AD698AP AD698 AD698SQ

AD[Analog Devices]
Part No. AD698AP AD698 AD698SQ
OCR Text ...standing Performance Linearity: 0.05% Output Voltage: 11 V Gain Drift: 20 ppm/ C (typ) Offset Drift: 5 ppm/ C (typ) Universal LVDT Signal...62C/w NC AD698 Typical Characteristics (at +25C and V = 15 V unless otherwise noted) S 240 2...
Description Universal LVDT Signal Conditioner

File Size 222.69K  /  12 Page

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    NTE[NTE Electronics]
Part No. NTE2371
OCR Text ..., RthCS . . . . . . . . . . . . 0.5C/w Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25C, L = 2.7mH, RG = 25, IAS = 19A ISD 19A, di/dt 200A/s, VDD V(BR)D...
Description MOSFET P-Ch, Enhancement Mode High Speed Switch

File Size 27.30K  /  3 Page

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    NTE[NTE Electronics]
Part No. NTE2372
OCR Text .... . . . . . . . . . . . . . . . 0.32w/C Gate-to-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...62C/w Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . ...
Description MOSFET P-Ch, Enhancement Mode High Speed Switch

File Size 26.89K  /  3 Page

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    NTE[NTE Electronics]
Part No. NTE2373
OCR Text ..., RthCS . . . . . . . . . . . . 0.5C/w Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = +25C, L = 8.7mH, RG = 25, IAS = 11A ISD 11A, di/dt 150A/s, VDD V(BR)D...
Description MOSFET P-Ch, Enhancement Mode High Speed Switch

File Size 27.43K  /  3 Page

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    NTE[NTE Electronics]
Part No. NTE2374
OCR Text ..., RthCS . . . . . . . . . . . . 0.5C/w Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = +25C, L = 2.7mH, RG = 25, IAS = 18A ISD 18A, di/dt 150A/s, VDD V(BR)D...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 27.33K  /  3 Page

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    NTE[NTE Electronics]
Part No. NTE2396
OCR Text ..., RthCS . . . . . . . . . . . . 0.5C/w Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 25V, starting TJ = +25C, L = 191H, RG = 25, IAS = 28A Note 3. ISD 28A, di/dt 170A/s, VDD V(BR)DSS, TJ +...
Description    MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 27.40K  /  3 Page

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    NTE[NTE Electronics]
Part No. NTE2397
OCR Text ..., RthCS . . . . . . . . . . . . 0.5C/w Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25C, L = 9.1H, RG = 25, IAS = 10A Note 3. ISD 10A, di/dt 120A/s, VDD V(BR)DSS, TJ +...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 27.30K  /  3 Page

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    P6SMB

Vishay Siliconix
Part No. P6SMB
OCR Text ..., repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? m...62c 58.9 65.1 1.0 53.0 1.0 7.1 85.0 0.104 p6smb68a 68a 68c 64.6 71.4 1.0 58.1 1.0 6.5 92.0 0.104 p...
Description Surface Mount TRANSZORB Transient Voltage Suppressors

File Size 141.64K  /  5 Page

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For 0.62c w Found Datasheets File :: 372    Search Time::2.875ms    
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