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http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
GCU08BA-130
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OCR Text |
... G
(250)
(85)
(140)
0.2 7
K
160MIN
20MAX
60.5
60.5
(13.7) (1.6)
A
14.51.3 10MIN
60.5 470.2
60.5
A PAR...62C VDM = 3/4 VDRM, VD = 3000V, LC = 0.3H (See Fig. 1, 3) Tj = 25/125C One half cycle at 60Hz, Tj = ... |
Description |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
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File Size |
60.32K /
6 Page |
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it Online |
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NTE[NTE Electronics]
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Part No. |
NTE2371
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OCR Text |
..., RthCS . . . . . . . . . . . . 0.5C/w Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25C, L = 2.7mH, RG = 25, IAS = 19A ISD 19A, di/dt 200A/s, VDD V(BR)D... |
Description |
MOSFET P-Ch, Enhancement Mode High Speed Switch
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File Size |
27.30K /
3 Page |
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it Online |
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NTE[NTE Electronics]
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Part No. |
NTE2372
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OCR Text |
.... . . . . . . . . . . . . . . . 0.32w/C Gate-to-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...62C/w Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . ... |
Description |
MOSFET P-Ch, Enhancement Mode High Speed Switch
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File Size |
26.89K /
3 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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Part No. |
NTE2373
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OCR Text |
..., RthCS . . . . . . . . . . . . 0.5C/w Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = +25C, L = 8.7mH, RG = 25, IAS = 11A ISD 11A, di/dt 150A/s, VDD V(BR)D... |
Description |
MOSFET P-Ch, Enhancement Mode High Speed Switch
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File Size |
27.43K /
3 Page |
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it Online |
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NTE[NTE Electronics]
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Part No. |
NTE2374
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OCR Text |
..., RthCS . . . . . . . . . . . . 0.5C/w Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = +25C, L = 2.7mH, RG = 25, IAS = 18A ISD 18A, di/dt 150A/s, VDD V(BR)D... |
Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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File Size |
27.33K /
3 Page |
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it Online |
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NTE[NTE Electronics]
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Part No. |
NTE2396
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OCR Text |
..., RthCS . . . . . . . . . . . . 0.5C/w Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 25V, starting TJ = +25C, L = 191H, RG = 25, IAS = 28A Note 3. ISD 28A, di/dt 170A/s, VDD V(BR)DSS, TJ +... |
Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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File Size |
27.40K /
3 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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Part No. |
NTE2397
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OCR Text |
..., RthCS . . . . . . . . . . . . 0.5C/w Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25C, L = 9.1H, RG = 25, IAS = 10A Note 3. ISD 10A, di/dt 120A/s, VDD V(BR)DSS, TJ +... |
Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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File Size |
27.30K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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