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  1.5 1.9ghz Datasheet PDF File

For 1.5 1.9ghz Found Datasheets File :: 808    Search Time::1.937ms    
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    SIEMENS AG
Part No. BFR182W
OCR Text 1 npn silicon rf transistor for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma f t = 8 ghz ...5 v, f = 1 mhz c eb - 0.6 - noise figure i c = 3 ma, v ce = 8 v, z s = z sopt , f = 90...
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

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    Sanyo
Part No. 2SC4405
OCR Text ...9B [2SC4405] 0.425 0.3 3 0~0.1 0.15 Features * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=1.5dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4405applied sets...
Description NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications

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    SIEMENS AG
Part No. BFR182T
OCR Text 1 npn silicon rf transistor preliminary data for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma ...5 pf c cb - 0.18 - c ce collector-emitter capacitance v ce = 10 v, f = 1 mhz - emitter-base cap...
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

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    SIEMENS AG
Part No. BFP182
OCR Text 1 npn silicon rf transistor for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma f t = 8 ghz ...5 v, f = 1 mhz 0.6 - c eb - 1.2 1.9 f - - noise figure i c = 3 ma, v ce = 8 v, z s ...
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

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    SIEMENS AG
Part No. BFP182W
OCR Text 1 npn silicon rf transistor for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma f t = 8 ghz ...5 v, f = 1 mhz 0.6 - c eb - 1.2 1.9 f - - noise figure i c = 3 ma, v ce = 8 v, z s ...
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

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    Sanyo
Part No. 2SC3778 0378
OCR Text ...VCB=10V, f=1MHz 40* 5.0 0.8 0.5 1.1 Conditions Ratings min typ max 1.0 10 200* GHz pF pF Unit A A * : The 2SC3778 is classified by 20mA hFE as follows : 40 C 80 60 D 120 100 E 200 Any and all SANYO products ...
Description NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors

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    BFP181

INFINEON[Infineon Technologies AG]
Part No. BFP181
OCR Text ... 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP181 Maximum Ratings Parameter Marking RFs 1=C Pin Configuration 2=E 3=...
Description NPN Silicon RF Transistor

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183R Q62702-F1594
OCR Text ... 2 mA to 28 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...5 mW 250 150 - 65 ... + 150 - 65 ... + 150 295 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183W Q62702-F1503
OCR Text ... 2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...5 mW 450 150 - 65 ... + 150 - 65 ... + 150 205 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

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    BFS483 Q62702-F1574 Q62702F1574

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS483 Q62702-F1574 Q62702F1574
OCR Text ... 2mA to 28mA * fT = 8GHz F = 1.2dB at 900MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic dischar...5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Paramete...
Description NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管(对于低噪声,高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system

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For 1.5 1.9ghz Found Datasheets File :: 808    Search Time::1.937ms    
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