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INFINEON[Infineon Technologies AG]
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| Part No. |
Q62702-G0091
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| OCR Text |
...1V *.STEP PARAM R LIST 33 47 68 100 150 * Voltage V1 Vcc V2 Vc *Vpul Vc supply 0 0 0 DC 3.0V DC 0.0V PULSE(0 3V 100ns 0 0 9us 1000m)
High Frequency Products
7
Edition A13, 06/00
BGC405
* Internal Resistors R1 3 Vc 47k R2 Vr 2... |
| Description |
Self-Biased BFP405
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| File Size |
117.58K /
10 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4650 IHP10T120
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| OCR Text |
... 20V, I C = 10A 10 none 0.2 2.0 100 nA S 5.0 1.65 1.7 5.8 2.15 6.5 mA 1.7 2.0 2.2 2.2 1200 V Symbol Conditions Value min. typ. max. Unit Rt...120W
25A
20A
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, DISSIPATED POWER
100W 80W... |
| Description |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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| File Size |
331.26K /
14 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
Infineon Technologies A...
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| Part No. |
SGW15N60 SGB15N60 SGP15N60
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| OCR Text |
...2.8 5
Unit
V
A 40 2000 100 960 101 62 99 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V ...120W 100W 80W 60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPAT... |
| Description |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT
IGBTs & DuoPacks - 15A 600V TO263AB SMD IGBT
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology
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| File Size |
411.41K /
12 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
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| Part No. |
SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60
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| OCR Text |
...T j 15 0 C 7 13 nH 1100 107 63 100 1320 128 76 130 nC pF IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 20 A 14 40 2500 100 nA S 1...120W 100W 80W 60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPAT... |
| Description |
Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
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| File Size |
263.73K /
12 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKB15N60HS
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| OCR Text |
... = 20 V , I C = 15 A 10 40 2000 100 nA S 3 1.5 1.5 4 2.0 2.0 5 A 2.8 3.5 3.15 4.00 600 V Symbol Conditions Value min. Typ. max. Unit
Devi...120W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100W 80W 60W 40W 20W 0W 25C
20A
10... |
| Description |
High Speed IGBT in NPT-technology
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| File Size |
345.40K /
14 Page |
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it Online |
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Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SPP46N03 Q67040-S4145-A3 Q67040-S4742-A2 SPB46N03
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| OCR Text |
...t A
ID
TC = 25 C, 1) TC = 100 C
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 C
Avalanche energy, single pulse
ID = 4...120W
0.050
l h ijk g f
VGS [V] a 4.0
b c 4.5
b
c
d
e
100 90 80
0.040
... |
| Description |
N-Channel SIPMOS Power Transistor
SIPMOS-TM POWER TRANSISTOR
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| File Size |
76.94K /
9 Page |
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it Online |
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Price and Availability
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