...ector to Emitter Voltage - V
12
1
10 IC - Collector Current - mA
100
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10
fT - Ga...8
VCE = 8 V f = 1 GHz
VCE = 8 V f = 1 GHz
6 4
10
2 0
1
2
5 10 20 50 IC - Col...
Description
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...ector to Emitter Voltage - V
12
1
2
5 10 20 IC - Collector Current - mA
50
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 12...8 6 4 2 0
VCE = 6 V f = 1 GHz
8
4
1
2
5 10 20 IC - Collector Current - mA
50
...
Description
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...gh Gain Bandwidth Product (fT = 12 GHz TYP.) * Low Noise, High Gain * Low Voltage Operation
2.1 0.2 1.25 0.1
PACKAGE DIMENSIONS
in mi...8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide...
Description
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...gh Gain Bandwidth Product (fT = 12 GHz TYP.) * Low Noise, High Gain * Low Voltage Operation
PACKAGE DIMENSIONS in millimeters
2.1 0.2
...8 mm wide. Pin1 (Collector), Pin2 (Emitter) faceto perforation side of the tape.
0.9 0.1
0.3
...
Description
Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...0 V Min
Outline
TO-220FM
12 3
1. Base 2. Collector 3. Emitter
2SC5022
Absolute Maximum Ratings (Ta = 25C)
Item Collector to b...8 mA 1.6 mA 20 I C (mA)
0 2. m A
1.4 mA A m 1.2 0 mA 1.
DC Current Transfer Ratio vs. Collector...
...
Collector current IC (A)
12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 800
-IB2
VCC
IC
tW
Vclamp
Collector to emitter voltage VCE (V)
Rth(t) -- t
102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
...0 120 140 160
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=5 1000 VCE=5V 100
fT -- IC
VCE...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)