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Microsemi, Corp.
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| Part No. |
PPHR70L60a
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| Description |
Insulated Gate Bipolar Transistor; Package: TO-254; vCE(sat) (v): 1.6; t(on) (nsec): 115; IC (a): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; Bv(CES) (v): 600; vGE(th) (v): 3 70 a, 600 v, N-CHaNNEL IGBT
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| File Size |
59.58K /
1 Page |
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it Online |
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Microsemi, Corp.
STMicroelectronics N.v.
MICROSEMI CORP
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| Part No. |
FSF2510 FSF2210 FSN1410 FSN1606 IRF540
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| Description |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (a): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BvDSS (v): 100; Rq: 1; vSD (v): 2.3 SMaLL SIGNaL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (a): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BvDSS (v): 100; Rq: 1.3; vSD (v): 2.5 22 a, 100 v, 0.1 ohm, N-CHaNNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (a): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BvDSS (v): 100; Rq: 2; vSD (v): 2.5 14 a, 100 v, 0.18 ohm, N-CHaNNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (a): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BvDSS (v): 60; Rq: 2; vSD (v): 1.8 16 a, 60 v, 0.07 ohm, N-CHaNNEL, Si, POWER, MOSFET
28 a, 100 v, 0.077 ohm, N-CHaNNEL, Si, POWER, MOSFET
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| File Size |
93.66K /
1 Page |
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it Online |
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Solid States Devices, Inc.
Solid State Devices, Inc.
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| Part No. |
SDR936Z SDR939M
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| Description |
30 aMPS 600 - 900 vOLTS 80 nsec ULTRa FaST reCTIFIER 30 a, 900 v, SILICON, reCTIFIER DIODE, TO-254aa
30 aMPS 600 - 900 vOLTS 80 nsec ULTRa FaST reCTIFIER 30 a, 600 v, SILICON, reCTIFIER DIODE
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| File Size |
38.63K /
2 Page |
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it Online |
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Price and Availability
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