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  125 a Datasheet PDF File

For 125 a Found Datasheets File :: 265557    Search Time::9.437ms    
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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...2 SMD @ 6cm2 RDS(on) 150 125 100 typ. 1.5 1 75 50 0.5 25 0 -50 -25 0 25 50 75 100 C 150 0...a 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: VIN 24 a 12 20 ID ...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-a5009-a2
OCR Text ...0 V, VDS = 100 V Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C Drain-source on-state resistance VGS = 10 V, ID = 12 a Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID ...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUH1215 4496

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH1215 4496
OCR Text ...V 7 5 10 700 10 1.5 1.5 14 Tj = 125 C o Min. Typ . Max. 0.2 2 100 Un it ma ma a V V V V Tj = 100 C o ts tf ts tf V CC = 400 V I B1 = 2 a I C = 12 a I B1 = 2 a I C = 12 a I B2 = -6 a 1.5 110 4 220 s ns s ns ...
Description HIGH VOLTaGE FaST-SWITCHING NPN POWER TRaNSISTOR
From old datasheet system

File Size 73.01K  /  7 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... 1500 11 2 2.5 2 2.5 50 -55 to +125 -55 to +150 300 UNIT V V V a a a a W C C C PRODUCT INFORMaTION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations ...
Description NPN SILICON TRaNSISTOR WITH INTEGRaTED DIODE

File Size 114.07K  /  5 Page

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    BUX41 ON0260

Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. BUX41 ON0260
OCR Text ...VCE = 250 V, VBE = -1.5 V, TC = 125_C) Collector-Emitter Sustaining Voltage (IC = 200 ma, IB = 0, L = 25 mH) 2 v 300 s, Duty Cycle v 2%. Characteristic (IC = 8 a, IB1 = IB2 = 1 a, VCC = 150 V, RC = 18.75 ) Motorola Bipolar...
Description 15 aMPERES NPN SILICON POWER METaL TRaNSISTOR 200 VOLTS 120 WaTTS
From old datasheet system

File Size 122.51K  /  4 Page

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    BUX48A BUV48A BUV48AFI BUX48

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. BUX48a BUV48a BUV48aFI BUX48
OCR Text ...15 30 55 4 20 TO-218 ISOWaTT218 125 55 -65 to 150 -65 to 150 150 150 V V V V a a a a a W C o C o Unit V CER V CES VCEO V EBO IC I CM I CP IB I BM P tot T stg Tj Collector-Emitter Voltage (R BE = 10) Collector-Emitter Voltage (V BE...
Description    HIGH POWER NPN SILICON TRaNSISTORS
RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 24V; Power: 1W; Pot-Core Transformer - separated
HIGH POWER NPN SILICON TRaNSISTORS

File Size 88.73K  /  7 Page

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    BUX48C BUV48C BUV48CFI

STMICROELECTRONICS[STMicroelectronics]
Part No. BUX48C BUV48C BUV48CFI
OCR Text ...200 700 7 15 30 55 4 20 TO -218 125 150 ISOW aTT 218 55 -65 to 150 150 175 200 Un it V V V V a a a a a W o o -65 to 200 -65 to 150 C C 1/6 January 2000 BUX48C/BUV48C/BUV48CFI THERMaL DaTa TO -3 R t hj-ca se Thermal Resista...
Description    HIGH VOLTaGE FaST-SWITCHING NPN POWER TRaNSISTORS

File Size 47.06K  /  6 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-a2701-a67 050B17N2 BSM50GB170DN2
OCR Text ...5 C VGE = 15 V, IC = 50 a, Tj = 125 C Zero gate voltage collector current ICES 0.5 - ma VCE = 1700 V, VGE = 0 V, Tj = 25 C VCE = 1700 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 320 na VGE = 20 V, VCE = ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 CD4044

INTERSIL[Intersil Corporation]
Part No. CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 CD4044
OCR Text ...kage Power Dissipation (PD) at +125 C For Ta = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For Ta = +100oC to +125oC (Package T...a SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD ...
Description Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125
CMOS Quad Clocked “DLatch
R/S Latches, Tri-State, Quad, Rad-Hard, CMOS, Logic
CMOS Quad Clocked “D” Latch
From old datasheet system
CMOS Quad 3 State R/S Latches
CMOS Quad Clocked D Latch
CMOS Quad Clocked “D Latch

File Size 108.99K  /  10 Page

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