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IRF[International Rectifier]
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| Part No. |
IRGB4045DPBF
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| OCR Text |
...
VCE (V)
ICE = 6.0A 4 ICE = 12a
VCE (V)
6
ICE = 3.0A
6
ICE = 3.0A ICE = 6.0A ICE = 12a
4
2
2
0 5 10 VGE (V) 15 20
0 5 10 VGE (V) 15 20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
10
Fig. 10 - Typical VCE ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
778.63K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRG4IBC30W
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| OCR Text |
..., IC = 1.0mA VGE = 15V 2.7 IC = 12a -- IC = 23A See Fig.2, 5 V -- IC = 12a , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100 V, IC = 12a 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = ... |
| Description |
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
158.63K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRG4BC30W
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| OCR Text |
... max. = 2.70V
@VGE = 15V, IC = 12a
n-channel
Benefits
* Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) * Of particular benefit to single-ended converters and boost ... |
| Description |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12a)
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| File Size |
137.40K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4BC30W_04 IRG4BC30WPBF IRG4BC30W04
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| OCR Text |
... max. = 2.70V
@VGE = 15V, IC = 12a
n-channel
Benefits
* Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) * Of particular benefit to single-ended converters and boost ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12a)
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| File Size |
578.68K /
8 Page |
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it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
SFP12N65
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| OCR Text |
... mosfet mosfet mosfet features 12a,650 v , r ds(on) (ma x 0. 7 8 )@v gs =10v ultra-low gate charge( t y pical 30nc) fast switching capability 100% a v alanche t e sted ma x imum junction t e mperature range(150 ) general description ... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
483.27K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4BC30U
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| OCR Text |
... typ. = 1.95V
@VGE = 15V, IC = 12a
n-channel
Benefits
* Generation 4 IGBTs offer highest efficiency available * IGBTs optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-st... |
| Description |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12a)
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| File Size |
165.35K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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