...ID Drain Current
I D (A)
-16
Pulse Test -3.5 V
-16
-12
-12
Drain Current
-8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to...1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. ...
Description
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
... -8 -12 Gate to Source Voltage -16 -20 V GS (V)
0.05
0.02 0.01
-1 -3
-10
-30
-100 -300
-1000
Drain Current
I D (A)
...1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. ...
Description
Silicon P Channel MOS FET High Speed Power Switching
... DS = -10 V
(A)
I D (A)
-16 -3.5 V
-16
-12
ID Drain Current
-12
Drain Current
-8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 -8...1m
10 m 100 m Pulse Width PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. RL ...
Description
Silicon P Channel MOS FET High Speed Power Switching
... Low on-resistance R DS(on) = 0.16 typ. * 4 V gete drive devices * High speed switching
Outline
TO-220FM
D
G
12 S
1. Gate 2...1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. ...
Description
Silicon P Channel MOS FET High Speed Power Switching
...ID Drain Current
I D (A)
-16
Pulse Test -3.5 V
-16
-12
-12
Drain Current
-8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to...1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. ...
Description
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching