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  175.84 Datasheet PDF File

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    CHA3023 CHA3023-99F

United Monolithic Semiconductors
Part No. CHA3023 CHA3023-99F
OCR Text ...-127,14 -144,06 -156,10 -170,79 175,70 157,84 142,87 MS21 dB 12,27 13,11 13,74 14,21 14,38 14,42 14,50 14,55 14,56 14,57 14,57 14,59 14,58 14,57 14,56 14,54 14,55 14,55 14,53 14,50 14,48 14,44 14,40 14,35 14,29 14,23 14,17 14,11 14,05 1...
Description 1-18 GHz WIDE BAND AMPLIFIER

File Size 385.94K  /  8 Page

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    HWL30NPA

Aimtron Technology
Part No. HWL30NPA
OCR Text ...160.71 -164.76 -168.30 -171.96 -175.00 -177.52 179.69 177.19 175.03 172.48 170.02 168.28 166.13 164.32 161.82 160.26 157.97 156.36 #&$ 6...84.98 81.12 78.13 75.17 71.97 69.30 66.88 64.24 61.61 59.56 57.27 54.65 52.68 50.29 48.22 45.62 43.7...
Description L-Band GaAs Power FET

File Size 104.41K  /  6 Page

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    MGF0915A MGF0915A11

Mitsubishi Electric Semiconductor
Part No. MGF0915A MGF0915A11
OCR Text ...7 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c electrical characteristics (ta=25 ? c) symbol...84 21.55 1800 0.946 -173.55 1.746 69.39 0.016 30.92 0.725 -178.66 0.94 20.38 2200 0.945 -176.72 1.45...
Description High-power GaAs FET (small signal gain stage)

File Size 107.57K  /  4 Page

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    EC2612 EC2612-99F_00 EC2612-99F/00

UMS[United Monolithic Semiconductors]
Part No. EC2612 EC2612-99F_00 EC2612-99F/00
OCR Text ...ture range Values 3.5 -2.5 280 +175 -55 to +175 Units V V mW C C (1) Operation of this device above any one of these parameters may cause...84 -16,86 -17,04 -17,11 S12 / 81,5 76,1 70,0 64,0 58,1 52,2 46,4 42,0 38,0 33,5 29,4 25,8 22,1 18,7 ...
Description 40GHz Super Low Noise PHEMT

File Size 109.89K  /  8 Page

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    MRF5811LT1

MOTOROLA[Motorola, Inc]
Part No. MRF5811LT1
OCR Text ...0.076 0.084 0.091 0.099 0.138 0.175 0.208 0.241 0.271 0.299 0.329 0.353 6 37 30 32 34 38 41 43 44 46 47 49 48 45 40 35 30 24 18 36 34 37...84 -131 -157 -168 -174 -179 177 173 170 168 165 152 141 129 119 109 101 92 84 S21 |S21| 18.83 9.9...
Description LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON

File Size 155.63K  /  8 Page

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    BUK9Y11-80E

NXP Semiconductors
Part No. BUK9Y11-80E
OCR Text ...y demanding environments due to 175 c rating ? true logic level gate with v gs(th) rating of greater than 0.5 v at 175 c 3. applications ? ...84 a p tot total power dissipation t mb = 25 c; fig. 2 - - 194 w static characteristics r dson dra...
Description N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56

File Size 314.67K  /  13 Page

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    AMMP-6420

http://
Agilent(Hewlett-Packard)
Part No. AMMP-6420
OCR Text ...-133.84 -149.08 -162.85 -174.89 175.16 167.60 161.58 155.54 148.54 139.87 130.07 119.80 109.47 99.32 89.33 79.50 69.50 58.76 46.60 32.92 13.79 0.42 -5.47 -11.98 -22.81 -38.63 -59.66 -88.81 -129.48 -178.96 135.67 98.32 64.76 32.49 -0.33 -37....
Description 6-18 GHz 1W Power Amplifier

File Size 82.59K  /  4 Page

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    EFA018A

Excelics Semiconductor, Inc.
Part No. EFA018A
OCR Text ...n tch channel temperature 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c pt total power dissipation ...84.3 25 . 0 0 . 800 142.4 1.53 2 8.3 0.11 3 -25. 2 0.51 8 -89.1 26 . 0 0 . 800 139.5 1.47 0 ...
Description Low Distortion GaAs Power FET

File Size 99.47K  /  2 Page

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    EFA025A

Excelics Semiconductor, Inc.
Part No. EFA025A
OCR Text ...n tch channel temperature 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c pt total power dissipation ...84 8 - 76. 4 3.422 116.7 0.06 9 42. 2 0.62 5 - 37.4 7. 0 0.84 6 - 84. 0 2.796 111.9 0.11 6 ...
Description 6-12V low distortion GaAs power FET

File Size 32.78K  /  3 Page

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