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  2 097 152 Datasheet PDF File

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    MX29LV161BTI-70 MX29LV161BTI-70R MX29LV161BTI-90 MX29LV161BTI-90R MX29LV161T MX29LV161TTC-90R MX29LV161TXBI-90R MX29LV16

MCNIX[Macronix International]
Part No. MX29LV161BTI-70 MX29LV161BTI-70R MX29LV161BTI-90 MX29LV161BTI-90R MX29LV161T MX29LV161TTC-90R MX29LV161TXBI-90R MX29LV161 MX29LV161BMC-70 MX29LV161BMC-90 MX29LV161BTC-70 MX29LV161BTC-70R MX29LV161BTC-90 MX29LV161BTC-90R MX29LV161BXBC-70 MX29LV161BXBC-70R MX29LV161BXBC-90 MX29LV161BXBC-90R MX29LV161BXBI-70 MX29LV161BXBI-70R MX29LV161BXBI-90 MX29LV161BXBI-90R MX29LV161TMC-70 MX29LV161TMC-90 MX29LV161TTC-70 MX29LV161TTC-70R MX29LV161TTC-90 MX29LV161TTI-70 MX29LV161TTI-70R MX29LV161TTI-90 MX29LV161TTI-90R MX29LV161TXBC-70 MX29LV161TXBC-70R MX29LV161TXBC-90 MX29LV161TXBC-90R MX29LV161TXBI-70 MX29LV161TXBI-70R MX29LV161TXBI-90
OCR Text 2.7V to 3.6V * 2,097,152 x 8/1,048,576 x 16 switchable * Single power supply operation - 3.0V only operation for read, erase and program operation * Fast access time: 70/90ns * Low power consumption - 20mA maximum active current - 0.2uA typ...
Description 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 992.12K  /  58 Page

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    2SC5551

SANYO[Sanyo Semicon Device]
Part No. 2SC5551
OCR Text ...5551] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Pa...097 0.088 0.074 0.058 0.055 0.064 0.098 0.134 0.173 S12 38.7 18.3 12.0 10.7 25.2 51.6 78.4 87.3 90....
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

File Size 42.01K  /  5 Page

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    62LV12816 IS62LV12816L-70TI IS62LV12816L-100B IS62LV12816L-100BI IS62LV12816L-100T IS62LV12816L-100TI IS62LV12816L-120B

Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
Part No. 62LV12816 IS62LV12816L-70TI IS62LV12816L-100B IS62LV12816L-100BI IS62LV12816L-100T IS62LV12816L-100TI IS62LV12816L-120B IS62LV12816L-120BI IS62LV12816L-120T IS62LV12816L-120TI IS62LV12816L-70B IS62LV12816L-70BI IS62LV12816L-70T
OCR Text ...I IS62LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, ...
Description 128K x 16 CMOS STATIC RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44

File Size 80.13K  /  9 Page

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    HM5117805 HM5117805J-5 HM5117805J-6 HM5117805J-7 HM5117805LJ-6 HM5117805LJ-7 HM5117805LJ-5 HM5117805LS-5 HM5117805LS-6 H

Elpida Memory
Part No. HM5117805 HM5117805J-5 HM5117805J-6 HM5117805J-7 HM5117805LJ-6 HM5117805LJ-7 HM5117805LJ-5 HM5117805LS-5 HM5117805LS-6 HM5117805LS-7 HM5117805LTS-5 HM5117805LTS-6 HM5117805LTS-7 HM5117805LTT-5 HM5117805LTT-6 HM5117805LTT-7 HM5117805S-5 HM5117805S-6 HM5117805S-7 HM5117805TS-5 HM5117805TS-6 HM5117805TS-7 HM5117805TT-5 HM5117805TT-6 HM5117805TT-7
OCR Text 2-Mword x 8-bit) 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z)) Jun. 27, 2001 The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord x 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma...
Description 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh

File Size 532.15K  /  32 Page

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    HYB3117805BJ-60 HYB3117805BJ-70 HYB3117805BSJ-50- HYB3117805BSJ-70 HYB3117805BSJ-60 HYB3117805BSJ-50 HB37805B

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117805BJ-60 HYB3117805BJ-70 HYB3117805BSJ-50- HYB3117805BSJ-70 HYB3117805BSJ-60 HYB3117805BSJ-50 HB37805B
OCR Text 2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO) Advanced Information * * * HYB3117805BSJ -50/-60/-70 2 097 152 words by 8-bit organization 0 to 70 C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access...
Description 2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)
From old datasheet system

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    HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 HYB5117805BSJ-50 HYB5117805-60 HYB5117805-50 HYB3117805-60 HYB3117805

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 HYB5117805BSJ-50 HYB5117805-60 HYB5117805-50 HYB3117805-60 HYB3117805-50 HB17805C Q67100-Q1104 HYB5117805BSJ-50-60
OCR Text 2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO) Advanced Information * 2 097 152 words by 8-bit organization * 0 to 70 C operating temperature * Hyper Page Mode-EDO-operation * Performance: -50 -60 60 15 30 104 25 HYB 5117805/BS...
Description 2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system

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    K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238F-JC2A0
OCR Text ...DR SDRAM Revision 0.1 (March 2 , 2004) - Target Spec Revision 0.0 (October 28, 2003) - Target Spec * Defined Target Specification ...097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous fe...
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144

File Size 295.12K  /  17 Page

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    K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J55323QF-GC16 K4J55323QF-GC20

Samsung semiconductor
Part No. K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J55323QF-GC16 K4J55323QF-GC20
OCR Text ...DDR3 SDRAM Revision 1.6 (Dec 2 , 2004) - Changed ICC2P and ICC6 for all frequency. Separted ICC6 for -GC and -GL. Revision 1.5 (Oct 5...097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous fe...
Description 256Mbit GDDR3 SDRAM

File Size 1,021.57K  /  49 Page

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    M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20ATP-7 M2V28S20ATP-7L M2V28S20ATP-8 M2V28S20ATP-8L M2V28S30ATP M2V28S30A

Mitsubishi Electric Semiconductor
Part No. M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20ATP-7 M2V28S20ATP-7L M2V28S20ATP-8 M2V28S20ATP-8L M2V28S30ATP M2V28S30ATP-6 M2V28S30ATP-6L M2V28S30ATP-7 M2V28S30ATP-7L M2V28S30ATP-8 M2V28S30ATP-8L M2V28S40ATP M2V28S40ATP-6 M2V28S40ATP-6L M2V28S40ATP-7 M2V28S40ATP-7L M2V28S40ATP-8 M2V28S40ATP-8L A99009
OCR Text ...194,304-WORD x 8-BIT) (4-BANK x 2,097,152-WORD x 16-BIT) PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION M2V28S20ATP is organized as 4-bank x 8,388,608-word x 4...
Description 128M Synchronous DRAM
From old datasheet system

File Size 622.79K  /  51 Page

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