...
0.70.1 10.00.2 5.50.2 2.70.2 4.20.2
Unit: mm
4.20.2
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Sati...40 2 150 -55 to +150 Unit V V V A A W C C
7.50.2
16.70.3
3.10.1
4.0
1.40.1
1.30.2
...
Description
Silicon PNP epitaxial planar type(For power switching)
...it: mm
10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB947 2SB947A 2SB947 Symbol VCBO VCEO VEB...
20.2
For power amplification and switching Complementary to 2SD1276 and 2SD1276A
0.70.1
10.00.2 5.50.2 2.70.2
4.20.2
Unit: mm...40 2 150 -55 to +150 Unit V
16.70.3
3.10.1
14.00.5
s Absolute Maximum Ratings
Parameter...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...277A
10.00.2 5.50.2 2.70.2 4.20.2
4.20.2
Unit: mm
7.50.2
s Features
q q q
4.0
High foward current transfer ratio hFE H...40.1
1.30.2
14.00.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base v...
Description
Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
...ent. (TC=25C)
Ratings -40 -50 -20 -40 -5 -12 -7 30 1.3 150 -55 to +150 Unit V
1.5max.
1.1max.
10.5min.
2.0
0.80.1
0.5max.
2.540.3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB952 2...
...it: mm
10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
s Features
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB953 2SB953A 2SB953 Symbol V...
...t er Op
=
30
10
DC
20
10
0
50 100 Case temperature TC (C)
150
-10 -30 -100 -300 Collector to emitter voltage VCE (V)
Typical Output Characteristics
2.0
DC Current Transfer Ratio vs. Collector Current 30000...