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22.6cm Datasheet PDF File

For 22.6cm Found Datasheets File :: 318 Search Time::2.641ms
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				INFINEON[Infineon Technologies AG]
Part No.	SPD14N06S2-80
OCR Text	...Values typ. 10.4 302 78 26 7 28 22 27 max. 400 104 38 11 42 33 40 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2ID RDS(on)max, ID =12A VGS =0V, VDS =25V, f=1MHz 5.2 - S pF VDD =30V, VGS =10V, ID =14A, RG =39 ns ...
Description	Low Voltage MOSFETs - DPAK; 14 A; 55V; NL; 80mOhm OptiMOS Power-Transistor
File Size	258.80K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPD26N06S2L-35
OCR Text	...TC=25C Symbol ID Value 30 22 Unit A Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 80 5 6 20 6...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Pag...
Description	1-Form-A solid state relay, bridge rectifier, Darlington transistor and optocoupler for AC side hookswitch 的OptiMOS功率晶体 OptiMOS Power-Transistor Low Voltage MOSFETs - DPAK; 26 A; 55V; LL; 35mOhm
File Size	264.04K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG http://
Part No.	SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309
OCR Text	... VDD=480V, ID=11A - 5.5 22 45 5.5 60 - nC VDD=480V, ID=11A, VGS=0 to 10V V(plateau) VDD=480V, ID=11A V 1Limited on...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4So...
Description	Cool MOS Power Transistor Feature New revolutionary high voltage technology Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
File Size	652.57K / 16 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP03N60S5 SPB03N60S5
OCR Text	...yp. 1.8 420 150 3.6 35 25 40 15 22.5 max. - Unit g fs Ciss Coss Crss t d(on) tr t d(off) tf V DS2I DRDS(on)max, ID=2A - S ...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3So...
Description	for lowest Conduction Losses Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	304.78K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSS84P06 BSS84P-L6327 BSS84P-L6433
OCR Text	... b c d e f g 22 20 -0.32 f b c -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0 -0.28 R DS(on) e d e 18 16 14 12 10 8 6 4V GS [V] = h i j k l ID -0.24 -0.2 -0.16 -0.12 -0.08 -0.04 0 ...
Description	SIPMOS Small-Signal-Transistor 170 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET GREEN, PLASTIC PACKAGE-3
File Size	131.84K / 8 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. Sanyo Semicon Device
Part No.	ALP228CAXA
OCR Text	...1 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol NC COM CKV1 CKV2 VVDD STV XSTV CSV ENB XENB PCD B R G VSS XPCG PCG CSH XSTH STH CKH2 CKH1 HVDD NC Leave this pin open Common electrode voltage V clock 1 V clock 2 VDD for V drive V start signa...
Description	Circular Connector; No. of Contacts:3; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No Low-Temperature Polysilicon 1.8-inch TFT LCD Module
File Size	674.21K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP15P10P
OCR Text	...s typ. 9.3 944 226 91 8.9 30 35 22 max. 1180 283 114 13.4 45 53 33 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous...
Description	Low Voltage MOSFETs - Power MOSFET, -100V, TO-220, RDSon = 0.24 SIPMOS Small-Signal-Transistor
File Size	82.05K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309
OCR Text	..., RG=6.8 - ns - 5.5 22 45 5.5 60 - nC V(plateau) VDD =480V, ID =11A V 1Limited only by maximum temperature 2Repet...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C ...
Description	Cool MOS Power Transistor Feature New revolutionary high voltage technology
File Size	567.48K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307
OCR Text	..., RG=6.8 - ns - 5.5 22 45 5.5 60 - nC V(plateau) VDD =480V, ID =11A V 1Limited only by maximum temperature 2Repet...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C ...
Description	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
File Size	556.18K / 15 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPD04N60C2 SPU04N60C2
OCR Text	... ns - 4.5 11 17.6 8 22.9 - nC V(plateau) VDD =350V, ID =4.5A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gi...
Description	for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	142.50K / 11 Page	View it Online	Download Datasheet

For 22.6cm Found Datasheets File :: 318 Search Time::2.641ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |