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  25-32a Datasheet PDF File

For 25-32a Found Datasheets File :: 1010    Search Time::1.469ms    
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    IRF6635

IRF[International Rectifier]
Part No. IRF6635
OCR Text ...l RDS(on) (m) Max. 30 20 32 25 180 250 200 25 VGS, Gate-to-Source Voltage (V) Units V Drain-to-Source Voltage Gate-to-Source Vol...32A A mJ A 8 6 4 2 0 0 1 2 T J = 25C 3 4 5 6 7 VDS= 24V VDS= 15V T J = 125C 8 9...
Description DirectFET Power MOSFET

File Size 238.01K  /  9 Page

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    IRFU2307Z IRFR2307Z

IRF[International Rectifier]
Part No. IRFU2307Z IRFR2307Z
OCR Text ...1070 190 400 --- --- 16 4.0 --- 25 250 200 -200 75 --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF ns nC nA V m V S A Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 32A VDS = 25V, ID = 32A VDS = 75V, VGS = 0V VDS = 75V, VG...
Description From old datasheet system
AUTOMOTIVE MOSFET

File Size 298.20K  /  11 Page

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    Sharp Corporation
Sharp, Corp.
Part No. LH543601M-20 LH543601M-25 LH543601M-30 LH543601P-25 LH543601P-20 LH543601M-35 LH543601P-30 LH543601P-35
OCR Text 25/30/35 ns pin-compatible and functionally-compatible 0.7 m -technology replacement for sharp lh5420 two 256 36-bit fifo buffers full...32a d 33a d 34a d 35a rt 2 d 35b d 34b d 33b d 32b d 31b d 30b d 29b d 28b d 27b d 26b d 25b v cco v...
Description 256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出

File Size 366.72K  /  43 Page

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    ST Microelectronics
Part No. STB60N55F3
OCR Text ... starting tj=25c, id=32 a, vdd= 25 v single pulse avalanche energy 390 mj v iso insulation withstand voltage (rms) from all three leads to ...32a 6.5 8.5 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. ...
Description N-CHANNEL Power MOSFET

File Size 635.77K  /  20 Page

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    SPW32N50C3

INFINEON[Infineon Technologies AG]
Part No. SPW32N50C3
OCR Text ... Continuous drain current TC = 25 C TC = 100 C A 32 20 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D ...32A, RG=2.7 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 253.93K  /  11 Page

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    IRFS250A

IR
International Rectifier
Part No. IRFS250A
OCR Text ...ge Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanch...32A, RG=6.2 See Fig 13 VDS=160V,VGS=10V, ID=32A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Dio...
Description Advanced Power MOSFET

File Size 253.57K  /  7 Page

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    IRF[International Rectifier]
Part No. IRHMS597260 IRHMS593260
OCR Text ...32 -20 -128 208 1.67 20 354 -32 25 -4.1 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063in./1.6mm from...32A VDS = -100V VDD = -100V, ID = -32A VGS =-12V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(o...
Description -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

File Size 202.16K  /  8 Page

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    IRGPH50MD2 2019

International Rectifier
Part No. IRGPH50MD2 2019
OCR Text ...di f/dt C-487 IRGPH50MD2 25 20 I , C olle ctor-to-E m itter C urrent (A ) T otal S w itch ing Losses (m J) RG TC V CC V GE =5 = 1 50 C = 9 60 V = 1 5V 1000 VG E E 20 V G= T J = 1 25 C 100 15 S A F E O P E R...
Description INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system

File Size 221.63K  /  8 Page

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    FUJI[Fuji Electric]
Part No. 2SK3775-01
OCR Text .... 300 3.0 Typ. Max. 5.0 25 250 100 0.13 Units V V A nA S pF 12 0.10 24 1970 2955 335 502 20 30 29 44 7.5 11 57 86 7 10.5 ...32A,Tch=25C 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Ciss Vcc= 60V 10 150V 240...
Description N-CHANNEL SILICON POWER MOSFET

File Size 90.84K  /  4 Page

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    FDD3682 FDD3682NL

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
Part No. FDD3682 FDD3682NL
OCR Text ...s ISD = 32A, dISD/dt = 100A/s 1.25 1.0 55 92 V V ns nC Notes: 1: Starting TJ = 25C, L = 0.27mH, IAS = 20A. (c)2002 Fairchild Semiconductor Corporation FDD3682 Rev. B FDD3682 Typical Characteristics TC = 25C unless otherwise n...
Description N-Channel PowerTrench MOSFET, 100V, 32A, 0.036 ohm 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m
N-Channel PowerTrench MOSFET 100V, 32A, 36mз
N-Channel PowerTrench MOSFET 100V, 32A, 36m?/a>

File Size 205.65K  /  11 Page

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For 25-32a Found Datasheets File :: 1010    Search Time::1.469ms    
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