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ST Microelectronics
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Part No. |
STB60N55F3
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OCR Text |
... starting tj=25c, id=32 a, vdd= 25 v single pulse avalanche energy 390 mj v iso insulation withstand voltage (rms) from all three leads to ...32a 6.5 8.5 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. ... |
Description |
N-CHANNEL Power MOSFET
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File Size |
635.77K /
20 Page |
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IRF[International Rectifier]
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Part No. |
IRHMS597260 IRHMS593260
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OCR Text |
...32 -20 -128 208 1.67 20 354 -32 25 -4.1 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from...32A VDS = -100V VDD = -100V, ID = -32A VGS =-12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(o... |
Description |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
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File Size |
202.16K /
8 Page |
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FUJI[Fuji Electric]
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Part No. |
2SK3775-01
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OCR Text |
....
300 3.0
Typ.
Max.
5.0 25 250 100 0.13
Units
V V A nA S pF
12
0.10 24 1970 2955 335 502 20 30 29 44 7.5 11 57 86 7 10.5 ...32A,Tch=25C
10
4
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
12 Ciss Vcc= 60V 10 150V 240... |
Description |
N-CHANNEL SILICON POWER MOSFET
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File Size |
90.84K /
4 Page |
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![FDD3682 FDD3682NL](Maker_logo/fairchild_semiconductor.GIF)
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
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Part No. |
FDD3682 FDD3682NL
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OCR Text |
...s ISD = 32A, dISD/dt = 100A/s 1.25 1.0 55 92 V V ns nC
Notes: 1: Starting TJ = 25C, L = 0.27mH, IAS = 20A.
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Typical Characteristics TC = 25C unless otherwise n... |
Description |
N-Channel PowerTrench MOSFET, 100V, 32A, 0.036 ohm 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel PowerTrench MOSFET 100V/ 32A/ 36m N-Channel PowerTrench MOSFET 100V, 32A, 36mз N-Channel PowerTrench MOSFET 100V, 32A, 36m?/a>
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File Size |
205.65K /
11 Page |
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