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  25.177 Datasheet PDF File

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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BVFR
OCR Text ...rting T = +25C, L = 5.00mH, R = 25, Peak I = 22A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V. ...177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780)...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm

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    APT5024BVR

ADPOW[Advanced Power Technology]
Part No. APT5024BVR
OCR Text ... UNIT Volts Amps 500 22 0.24 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS =...177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780)...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.21K  /  4 Page

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    APT5025BN APT5030BN

ADPOW[Advanced Power Technology]
Part No. APT5025BN APT5030BN
OCR Text 25 21.0A 0.30 POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V N -...177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780)...
Description POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 51.13K  /  4 Page

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    APT5028BVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5028BVR
OCR Text ... UNIT Volts Amps 500 20 0.28 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS =...177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780)...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 20A 0.280 Ohm

File Size 61.82K  /  4 Page

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    APT5030AVR

ADPOW[Advanced Power Technology]
Part No. APT5030AVR
OCR Text ...IT Volts Amps 500 14.7 0.300 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS =...177) 30.40 (1.197) 1.52 (.060) 3.43 (.135) 6.35 (.250) 9.15 (.360) 7.92 (.312) 12.70 (.500) 5....
Description POWER MOS V 500V 14.7A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.48K  /  4 Page

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    APT50GF120B2R APT50GF120LR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50GF120B2R APT50GF120LR
OCR Text ...ure. IC = IC2, VCC = 50V, RGE = 25, L = 68H, Tj = 25C See MIL-STD-750 Method 3471 The maximum current is limited by lead temperature. APT R...177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.87 (.113) 3...
Description The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代
Fast IGBT 1200V 80A

File Size 37.28K  /  3 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ...OLTAGE (NORMALIZED) 1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temper...177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780)...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    APT50M65 APT50M65B2FLL APT50M65LFLL

ADPOW[Advanced Power Technology]
Part No. APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text ...(.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.95K  /  2 Page

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    APT8020B2FLL APT8020LFLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2FLL APT8020LFLL
OCR Text ...(.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.72K  /  2 Page

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    APT8020B2LL APT8020LLL APT6029BLL APT6029SLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2LL APT8020LLL APT6029BLL APT6029SLL
OCR Text ...YP MAX UNIT 5175 975 170 190 25 123 12 14 38 8.8 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Tim...177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.6...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.99K  /  2 Page

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