3.9a 2.5a pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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3.9a 2.5a Datasheet PDF File

For 3.9a 2.5a Found Datasheets File :: 2267 Search Time::3.735ms
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				IRF[International Rectifier]
Part No.	IRFMG40
OCR Text	...FET TECHNOLOGY (R) RDS(on) 3.5 ID 3.9a HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined w...
Description	POWER MOSFET THRU-HOLE 1000V, N-CHANNEL
File Size	471.92K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TRR
OCR Text	...-8.2 -52 66 0.53 20 194 -8.4 6.3 -5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramet...9A BOTTOM -7.8A TOP -20V tp 0.01 300 15V 200 Fig 12a. Unclamped Inductive Test ...
Description	-100V Single P-Channel HEXFET Power MOSFET in a I-Pak package -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) HEXFET? Power MOSFET
File Size	212.33K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K7Q161862 K7Q161862B K7Q163662B
OCR Text	...13 VREF NC NC Q15 NC D17 NC TCK 3 NC D9 D10 Q10 Q11 D12 Q13 VDDQ D14 Q14 D15 D16 Q16 Q17 SA 4 W SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDD...9A,4B,8B,5C-7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D, 3F,2G,3J,...
Description	512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
File Size	333.83K / 17 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	RFD3N08 RFD3N08L RFD3N08LSM FN2836
OCR Text	...d RFD3N08L, RFD3N08LSM 80 80 10 3 Refer to Peak Current Curve 30 0.2 Refer to UIS Curve -55 to 175 300 260 UNITS V V V A W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 3A0V的，0.800欧姆，逻辑层次，N沟道功率MOSFET From old datasheet system 3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs
File Size	68.59K / 8 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK2082-01
OCR Text	... = 100H Min. 900 2,5 Typ. 3,0 10 0,2 10 1,1 10 2200 210 65 25 60 140 70 Max. 3,5 500 1,0 100 1,4 3300 320 100 40 90 210 110 9 36 1,...9A 150W > Characteristics Typical Output Characteristics ID [A] 1 RDS(ON) [] ...
Description	N-channel MOS-FET
File Size	213.41K / 2 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	FAN5038 FAN5038M FAN5038MX
OCR Text	...voltage adjustable from 1.5V to 3.6V * Independent adjustable current limits * Core up to 13A, I/O up to 5A * Precision trimmed low TC volta...9A ESR 55m Application Information The FAN5038 contains a precision trimmed low TC voltage refe...
Description	Current-Mode SMPS Controller SWITCHING CONTROLLER, PDSO16 Dual Voltage Controller for DSP Power
File Size	82.58K / 15 Page	View it Online	Download Datasheet

				ir
Part No.	IR2011
OCR Text	...ltage lockout for both channels 3.3V and 5V input logic compatible CMOS Schmitt-triggered inputs with pull-down Matched propagation delay fo...9A. Logic "0" Input Voltage vs. Temperature www.irf.com 9 IR2011(S) & (PbF) 5 High Level...
Description	Driver
File Size	139.95K / 17 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7663 IRF7663TR
OCR Text	... S S G 2 VDSS = -20V 3 6 4 5 RDS(on) = 0.020 T op V ie w Description New trench HEXFET(R) power MOSFETs from I...9A BOTTOM -3.6A TOP -ID , Drain Current (A) 6.0 180 4.5 120 3.0 1.5 60 0....
Description	Trench Technology Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm) HEXFET? Power MOSFET Power MOSFET(Vdss=-20V/ Rds(on)=0.020ohm)
File Size	73.64K / 7 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7Q163682A K7Q161882 K7Q161882A
OCR Text	... addition 2. 1.8V Vddq addition 3. Speed bin change 1. Changed Pin configuration at x36 organization. - 9F ; from Q14 to D14 . - 10F ; from ...9A,4B,8B,5C-7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D, 3F,2G,3J,...
Description	512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36 512Kx36 & 1Mx18 QDR b2 SRAM
File Size	501.65K / 17 Page	View it Online	Download Datasheet

For 3.9a 2.5a Found Datasheets File :: 2267 Search Time::3.735ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |