...S = VCC = VDD = 0V -6 6 300 -20 35 450 5 10 Value T yp. 6.3 10.8 -6.3 -10.8 1.4 1.4 0.8 1 -1 -60 60 -5 -10 Max. V V V V V V A A mA mA Un it...50ns. NOTE B: CL includes probe and jig capacitance.
7/13
ST75C185
Driver Voltage Transfer Ch...
...L-15 tcycle =150ns
-
-
35
mA
-
-
5
mA
-
-
40
mA
IDD02
-
-
35
mA
-
-
30 3 100 50
mA mA uA uA
IDDS1 *IDDS2 Note * Standby Current
\Cel = VIH or CE2 = VIL \CE1 = VDD - 0.2V o...
Description
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
...68 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010
8 ...
Description
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns