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  500.4 Datasheet PDF File

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...C=25C) Ratings 800 900 800 900 500 8 15 7 4 45 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC5077 2SC5077A 2SC5077 Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=2...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

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    2SC829 2SC829B 2SC829C

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PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SC829 2SC829B 2SC829C
OCR Text ...k 1 Transistor PC -- Ta 500 12 Ta=25C 450 10 IB=100A 80A 8 60A 6 40A 50 2SC829 IC -- VCE 60 VCE=10V IC -- VBE Collector p...4 2 20A 10 0 0 6 12 18 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Colle...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

File Size 54.87K  /  3 Page

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    2SD1010

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ...k 1 Transistor PC -- Ta 500 160 Ta=25C 140 400 100 25C Ta=75C 80 -25C 2SD1010 IC -- VCE 120 VCE=10V IC -- VBE Collector p...4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ...urrent Gain h V = 3V, I = Min 1,500 CE C 3A FE Max 30,000 Collector to Emitter Saturation3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitt...4.17 *Z/W Transition Frequency fT V = 10V, 0.5A = TYP 20 Hz M CE C I Turn on Time ton Max 2 I = 5A C...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...ent Gain h V = 3V, I = 3A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitter...4.17 *Z/W Transition Frequency fT V = 10V, 0.5A = TYP 20 MHz CE C I Turn on Time ton Max 2 I = 3A C ...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...ent Gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter ...4 2 1.6 1.2 0.8 0.4 0 1 10 100 200 3.2 IC = 1A 2.8 2.4 12A 2 8A 5A 3A 1.6 IC = ...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...ent Gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter ...4 8A IC = 0.5A 12A 2.4 2 5A 3A 2 1.6 1.6 1A 1.2 1.2 IC = 0.5A Collecto...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1026

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1026
OCR Text ...ngs Max 0.1 Max 0.1 Max 5 Min 1,500 Max 30,000 Max 1.5 Max 2.0 Max 1.25 TYP 20 Max 2 Max 5 Max 3 Unit V V V A A A A W Nm Unit mA mA ...4 2 1.6 1.2 0.8 0.4 0 1 10 100 200 3.2 2.8 IC = 0.5A 2.4 22A 15A 10A 3A 5A 2 1.6 ...
Description Darlington Transistor(15A NPN)

File Size 405.96K  /  8 Page

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    2SD1027

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1027
OCR Text ...ngs Max 0.1 Max 0.1 Max 5 Min 1,500 Max 30,000 Max 1.5 Max 2.0 Max 1.25 TYP 20 Max 2 Max 8 Max 5 Unit V V V A A A A W Nm Unit mA mA ...4 IB1 = 0.002IC IB2 = 0.03A VBB2 = 5V Tc = 25C 0 50 100 150 200 0 Collector-Emitter Voltage...
Description Darlington Transistor(15A NPN)

File Size 456.51K  /  10 Page

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    2SD1113 2SD1113K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1113 2SD1113K
OCR Text ...at) t on t off Min 300 300 7 -- 500 -- -- -- -- Typ -- -- -- -- -- -- -- 2.0 23 Max 500 -- -- 100 -- 1.5 2.0 -- -- V V s s Unit V V V A Test...4 A*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB1 = -IB2 = 40 mA I C = 4 A, IB1 =...
Description Silicon NPN Triple Diffused

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