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03K00 S08QE64 2SC3356 2A222 DS1831DS G530250 SSF4604 2N5610
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  5a 250 Datasheet PDF File

For 5a 250 Found Datasheets File :: 24848    Search Time::1.5ms    
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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4612
OCR Text ...v -60v i d = 4.5a (v gs =10v) -3.2a (v gs = -10v) r ds(on) r ds(on) < 56...250 m a on state drain current drain-source breakdown voltage i d =250 m a, v gs =0v maximum body-di...
Description 60V Complementary Enhancement 60V Complementary Enhancement

File Size 689.64K  /  9 Page

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    Alpha
Part No. AO4600L
OCR Text ...0v i d = 6.9a (v gs = 10v) -5a (v gs = -10v) r ds(on) < 27m ? < 49m ? (v gs =- 10v) < 32m ? < 64m ? (...250 a on state drain current v gs =4.5v, v ds =5v v ds =24v, v gs =0v a gate-body leakage curren...
Description Complementary Enhancement Mode Field Effect Transistor 增强模式互补场效应晶体管

File Size 264.37K  /  7 Page

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    KHB011N40F1 KHB011N40F2 KHB011N40P1 KHB011N40P107

KEC(Korea Electronics)
Part No. KHB011N40F1 KHB011N40F2 KHB011N40P1 KHB011N40P107
OCR Text ...TURES VDSS(Min.)= 400V, ID= 10.5a Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P F G H I J ...250 A, VGS=0V ID=250 A, Referenced to 25 VDS=400V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10...
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR

File Size 497.58K  /  7 Page

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    0876.125MXEP 0876.250MXEP 087601.6MXEP 0876002.MXEP 0876004.MXEP 0876005.MXEP 0876.160MXEP 0876.630MXEP

Littelfuse
Part No. 0876.125MXEP 0876.250MXEP 087601.6MXEP 0876002.MXEP 0876004.MXEP 0876005.MXEP 0876.160MXEP 0876.630MXEP
OCR Text ... E10480 0.125 - 0.630A 1.6 - 5a 0.125 - 5a Applications Electrical Characteristics % of Ampere Rating 150% 210% 275% 400% 1000% Op...250 0.630 1.6 2.0 4.0 5.0 Voltage Rating (V) 250 250 250 250 250 250 250 250 Nominal Agency Approval...
Description Axial Lead & Cartridge Fuses

File Size 155.25K  /  3 Page

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    RBQ10B45A

Rohm
Part No. RBQ10B45a
OCR Text ...ard voltage v f - - 0.65 v i f =5a reverse current i r - - 0.15 ma v r =45v parameter limits reverse voltage (repetitive peak) 45 reverse vo...250 300 8.3ms 1cyc i fsm ave121a ifsm dispersion map peak surge forward current:i fs...
Description Schottky Barrier Diode

File Size 1,150.83K  /  5 Page

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    RBQ10B65A

Rohm
Part No. RBQ10B65a
OCR Text ...ard voltage v f - - 0.69 v i f =5a reverse current i r - - 0.15 ma v r =65v average rectified forward current (*1) 10 parameter limits rever...250 300 8.3ms ifsm 1cyc ave:130a peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 ...
Description Schottky Barrier Diode

File Size 374.87K  /  5 Page

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    Dialog Semiconductor
Part No. SLG55593
OCR Text ... 2.0 data communication with 1.5a charging) ? apple ipad* @ 2a charging current support ? automatic cdp/sdp mode support with smart-cdp=1 ...250 -- 250 na i dpon , i dmon off-leakage current v dd = 3.6v v dp = v dm = 3.3v to 0.3v v cb = ...
Description    USB Host Charger Identification

File Size 167.14K  /  10 Page

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    Dialog Semiconductor
Part No. SLG55590
OCR Text ... 2.0 data communication with 1.5a charging) ? apple ipad* @ 2a charging current support ? automatic cdp/sdp mode support with smart-cdp=1 ...250 -- 250 na 000-0055590-022 page 4 of 10 slg55590 slg55590a advanced electrical characteristi...
Description    USB Host Charger Identification

File Size 167.83K  /  10 Page

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    VND1NV04 VNN1NV04 VNS1NV04 VNS1NV0413TR VND1NV0413TR VNN1NV0413TR VND1NV04-1

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
http://
Part No. VND1NV04 VNN1NV04 VNS1NV04 VNS1NV0413TR VND1NV0413TR VNN1NV0413TR VND1NV04-1
OCR Text ...V) Test Conditions VIN=0V; ID=0.5a VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 ...250 500 Unit m 3/18 1 VND1NV04 / VNN1NV04 / VNS1NV04 ELECTRICAL CHARACTERISTICS (continued...
Description "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
“OMNIFET II? FULLY AUTOPROTECTED POWER MOSFET

File Size 390.95K  /  18 Page

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