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CMDZ11V 050V3C SKL10120 CY20ASMD BUL62B 56F801 HE89C21 C220MC
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  6-300s Datasheet PDF File

For 6-300s Found Datasheets File :: 11786    Search Time::1.937ms    
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    Diodes Inc.
Diodes, Inc.
Part No. BAS70W-06-7-F BAS70W-05-7-F BAS70W-04-7-F BAS70W-7-F
OCR Text ...0.1 0 0.2 0.4 TA = -40C 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (nA) 10000 TA = 125C 1000 TA = 75C 100 10 ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE

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    Diodes Inc.
Diodes, Inc.
Part No. BAS70-04T-7-F BAS70T-7-F BAS70-06T-7-F BAS70-05T DIODESINC-BAS70-04T-7-F
OCR Text ...0.1 0 0.2 0.4 TA = -40C 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (nA) 10000 TA = 125C 1000 TA = 75C 100 10 ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE

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    Fairchild Semiconductor Corporation
Part No. FDFMA2P029Z
OCR Text ... (Note 1a) Ratings -20 12 -3.1 -6 1.4 0.7 -55 to +150 20 2 Units V V A W C V A Thermal Characteristics RJA RJA RJA RJA Thermal Resistanc...300s DUTY CYCLE = 2.0%MAX VGS = -2.0V VGS = -4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 ...
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.1A, 95mohm

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    Diodes Inc.
Diodes, Inc.
Part No. BAS70DW-05-7-F BAS70DW-04-7-F BAS70DW-06-7-F BAS70TW-7-F BAS70BRW-7-F
OCR Text ...ation (mw) d note 1 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 1 . 8 1.6 0 10 5 20 25 15 35 30 40 c , total capacitance (pf) t v , reverse voltage (v) fi g .3 t y pical capacitance r f = 1.0mhz 0.1 1 10 100 1000 10000 0 20 10 30 60 50 40 70 v , reverse ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE

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    Diodes
Part No. BAS70DW-05
OCR Text ... dissipation (mw) d 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 1 . 8 1.6 0 10 5 20 25 15 35 30 40 c , total capacitance (pf) t v , reverse voltage (v) r fi g .3 t y pical capacitance f = 1.0mhz 0.1 1 10 100 1000 10000 0 20 10 30 60 50 40 70 v , reverse ...
Description Schottky Diodes

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    Won-Top Electronics Co., Ltd.
Part No. BAS70C-T1 BAS70S-T1 BAS70A-T1
OCR Text ...dissipation ( mw) d 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 1 . 8 1.6 0 10 5 20 25 15 35 30 40 c , total capacitance (pf) t v , reverse voltage (v) r fi g .3 t y pical capacitance f= 1.0mhz 0.1 1 10 100 1000 10000 0 20 10 30 60 50 40 70 v , reverse ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管

File Size 52.96K  /  5 Page

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    VN10KN3-P013-G VN10KN3-G VN10KN3-P002 VN10KN3-P002-G VN10KN3-P003 VN10KN3-P003-G VN10KN3-P014 VN10KN3-P014-G

Supertex, Inc
Part No. VN10KN3-P013-G VN10KN3-G VN10KN3-P002 VN10KN3-P002-G VN10KN3-P003 VN10KN3-P003-G VN10KN3-P014 VN10KN3-P014-G
OCR Text ...ut characteristics 1.0 0.8 0.6 0.4 0.2 0 v ds (volts) i d (amperes) saturation characteristics 1.0 0.8 0.6 0.4 0.2 0 maxim...300s, 2% duty cycle, pulse test to-92 (dc) 0 10 20 ...
Description N-Channel Enhancement-Mode Vertical DMOS FET

File Size 522.68K  /  6 Page

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    ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC

ZETEX PLC
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
Part No. ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC
OCR Text 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique ...300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active di...
Description COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET 4900 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

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