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580ME TCJA106M 075757 ON1991 MM5ZB39H 0E226 4081BCN R1060
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  600-s Datasheet PDF File

For 600-s Found Datasheets File :: 105808    Search Time::2.484ms    
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    AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X A

ALPHA Semiconductor
Alpha Industries Inc
ETC[ETC]
ALPHA[Alpha Industries]
Alpha Industries, Inc.
Part No. AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X AS1117R-5V AS1117R-2.85V AS1117R-1.5V AS1117R-3.3V AS1117S-3V AS1117M1-3V AS1117U-5V AS1117T-2.5V AS1117T-2.85V AS1117M1-2.85V AS1117M1-5V AS1117M1-2.5V AS1117M3-5V AS1117S-2.5V
OCR Text ...6 (9.042 0.005 0.127) 0.600 + 0.025 (15.24 0.635) 0.103 BSC (2.616) 0.050 (1.270) 0.032 + 0.001 (0.813 + 0.025) - 0.015 (0...S) 4.0 (0.158) 3.8 (0.150) 5.2 (0.205) 4.6 (0.181) 6.2 (0.244) 5.8 (0.228) Pin 1 1.27...
Description 800mA low dropout regulator 2,5V
800mA low dropout regulator 3V
800mA low dropout regulator 1,5V
800mA low dropout regulator 5V
800mA Low Dropout Regulator SCSI-II Active Terminator
AB 2C 2#16 SKT RECP
800mA low dropout regulator 2,85V
800mA low dropout regulator 3,3V

File Size 75.37K  /  11 Page

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    BAT54C-7 BAT54S-7 BAT54A-7 BAT54-7 BAT54 BAT54S BAT54A BAT54C

NXP Semiconductors N.V.
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
Part No. BAT54C-7 BAT54S-7 BAT54A-7 BAT54-7 BAT54 BAT54S BAT54A BAT54C
OCR Text ...JA Tj, TSTG Value 30 200 300 600 200 500 -65 to +125 Unit V mA mA mA mW C/W C Electrical Characteristics @ TA = 25C unless otherwis...S IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 PD, POWER DISSIPATION (mW) 200 100 T...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

File Size 67.16K  /  3 Page

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    BAT54C-T1 BAT54C-T3 BAT54S-T1 BAT54S-T3 BAT54A-T1 BAT54A-T3 BAT54-T1 BAT54-T3 BAT54

Won-Top Electronics Co., Ltd.
Part No. BAT54C-T1 BAT54C-T3 BAT54S-T1 BAT54S-T3 BAT54A-T1 BAT54A-T3 BAT54-T1 BAT54-T3 BAT54
OCR Text ... Unit 30 V 100 200 300 600 200 500 -65 to +125 mA mA mA mA mW K/W C BAT54/A/C/S 1 of 3 (c) 2002 Won-Top Electronics Maximum Ratings and Electrical Characteristics, Single Diode Characteristic Reverse Breakdown Volta...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管

File Size 35.30K  /  3 Page

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    BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW

DIODES[Diodes Incorporated]
Diodes Inc.
Part No. BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW
OCR Text ... RqJA Tj, TSTG Value 30 200 300 600 200 625 -65 to +125 Unit V mA mA mA mW C/W C Characteristic Peak Repetitive Reverse Voltage Working P...S Jun 6 Jul 7 2006 T Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30152 Rev. 7 - 2 KXX...
Description    SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Low-Cost, Precision, High-Side Current-Sense Amplifier

File Size 45.33K  /  2 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text ...- - - - -65 - -65 30 200 300 600 200 +150 125 +125 V mA mA mA mW C C C ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise spec...s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 standard mounting conditi...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    BCM1250

ETC
Broadcom Corporation.
Part No. BCM1250
OCR Text 600 MHz-1 GHz FEATURES SUMMARY * Two 64-bit MIPS CPUs, scalable from * Quad-issue in order pipeline; dual execute, dual memory pipes * E...s world-class performance, power efficiency and integration, the processor is ideal for a broad vari...
Description HIGH PERFORMANCE INTEGRATED 64 BIT MULTIPROCESSOR

File Size 136.73K  /  2 Page

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    BCM5402

Electronic Theatre Controls, Inc.
ETC
Broadcom
Part No. BCM5402
OCR Text ...t * Wake On LAN mode--less than 600 mW per port TM monolithic CMOS chip * MII, GMII, TBI, RGMII, and RTBI interface options automatic...s cable analyzer software can be used with the device to provide remote management of the cable and ...
Description DUAL PORT 10/100/1000 BASE T GIGABIT COPPER TRANSCEIVER
Dual Port 10/100/1000BASE-T Gigabit Copper Transceiver

File Size 129.67K  /  2 Page

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...C UNIT handbook, halfpage 600 MBG248 P tot (mW) 400 200 0 0 50 100 150 T s ( C) o 200 Fig.2 Power derating curve. 1998 Oct 02 3 Philips Semiconductors Product specification NPN 9 GHz wideband transist...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

File Size 154.15K  /  16 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text ... 1.5 10 V ITS(on) - - 10 600 0.5 0.3 mA Tj = 25 C Tj = 150 C IH TTS(on) 0.05 0.05 150 C - s 0.5 2.5 toff Semiconductor Group 3 BTS 120 Examples for short-circuit protection at Tj = - 55 ... + 150 C, unle...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... 1 0 0 200 400 600 800 1000 1200 1400 1600 VCE - Collector-Emitter Voltage - V VCE - Collector-Emitter Voltage ...s standard warranty. Testing and other quality control techniques are utilized to the extent PI deem...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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