600v 7a a mos power transistor pdf Datasheet P15 Description --- IC-ON-LINE


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600v 7a a mos power transistor Datasheet PDF File

For 600v 7a a mos power transistor Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

				IRF[International Rectifier]
Part No.	IRG4BC10SD-L IRG4BC10SD-S
Description	600v DC-1 kHz (Standard) Copack IGBT in a D2-Pak package 600v DC-1 kHz (Standard) Copack IGBT in a TO-262 package INSULaTED GaTE BIPOLaR TRaNSISTOR WITH ULTRaFaST SOFT RECOVERY DIODE(Vces=600v, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0a)
File Size	213.44K / 12 Page	View it Online	Download Datasheet

				International Rectifier IRF
Part No.	IRG4BC20FD IRG4BC20FDPBF
Description	600v Fast 1-8 kHz Copack IGBT in a TO-220aB package INSULaTED GaTE BIPOLaR TRaNSISTOR WITH ULTRaFaST SOFT RECOVERY DIODE(Vces=600v, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0a)
File Size	218.92K / 10 Page	View it Online	Download Datasheet

				aDPOW[advanced power Technology]
Part No.	aPT6030BN aPT6033BN
Description	power mos IV 600v 22.0a 0.33 Ohm / 600v 23.0a 0.30 Ohm N-CHaNNEL ENHaNCEMENT MODE HIGH VOLTaGE power mosFETS
File Size	51.10K / 4 Page	View it Online	Download Datasheet

				aDPOW[advanced power Technology]
Part No.	aPT6015JN aPT6018JN
Description	power mos IV 600v 38.0a 0.15 Ohm / 600v 35.0a 0.18 Ohm N-CHaNNEL ENHaNCEMENT MODE HIGH VOLTaGE power mosFETS
File Size	61.77K / 4 Page	View it Online	Download Datasheet

				aDPOW[advanced power Technology]
Part No.	aPT6040 aPT6040BN aPT6045BN
Description	power mos IV 600v 18.0a 0.40 Ohm / 600v 17.0a 0.45 Ohm N-CHaNNEL ENHaNCEMENT MODE HIGH VOLTaGE power mosFETS
File Size	50.59K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR
Description	600v UltraFast 8-60 kHz Discrete IGBT in a D-Pak package INSULaTED GaTE BIPOLaR TRaNSISTOR(Vces=600v, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0a)
File Size	130.04K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	FL14KM-12a
Description	power mosFETs: FL Series TRaNSISTOR \| mosFET \| N-CHaNNEL \| 600v V(BR)DSS \| 14a I(D) \| TO-220FN
File Size	40.28K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PC40FD IRG4PC40 IRG4PC40FDPBF
Description	600v Fast 1-8 kHz Copack IGBT in a TO-247aC package INSULaTED GaTE BIPOLaR TRaNSISTOR WITH ULTRaFaST SOFT RECOVERY DIODE(Vces=600v, Vce(on)typ.=1.50V, @Vge=15V, Ic=27a)
File Size	212.91K / 10 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc.
Part No.	ISL9G1260EP3 ISL9G1260ES3
Description	TRaNSISTOR \| IGBT \| N-CHaN \| 600v V(BR)CES \| 20a I(C) \| TO-220aB TRaNSISTOR \| IGBT \| N-CHaN \| 600v V(BR)CES \| 20a I(C) \| TO-263aB 晶体管\| IGBT的\|正陈\| 600v的五（巴西）国际消费电子展\|甲一（c）\|63aB
File Size	147.96K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	GaL16V8 GaL16V8aS-20QC3 GaL16V8aS GaL16V8aS-10EB1 GaL16V8aS-10EB3 GaL16V8aS-10EC1 GaL16V8aS-10EC3 GaL16V8aS-10HB1 GaL16V8aS-10HB3 GaL16V8aS-10HC1 GaL16V8aS-10HC3 GaL16V8aS-10QB1 GaL16V8aS-10QB3 GaL16V8aS-10QC1 GaL16V8aS-10QC3 GaL16V8aS-12EB1 GaL16V8aS-12EB3 GaL16V8aS-12EC1 GaL16V8aS-12EC3 GaL16V8aS-12HB1 GaL16V8aS-12HB3 GaL16V8aS-12HC1 GaL16V8aS-12HC3 GaL16V8aS-12QB1 GaL16V8aS-12QB3 GaL16V8aS-12QC1 GaL16V8aS-12QC3 GaL16V8aS-15EB1 GaL16V8aS-15EB3 GaL16V8aS-15EC1 GaL16V8aS-15EC3 GaL16V8aS-15HB1 GaL16V8aS-15HB3 GaL16V8aS-15HC1 GaL16V8aS-15HC3 GaL16V8aS-15QB1 GaL16V8aS-15QB3 GaL16V8aS-15QC1 GaL16V8aS-15QC3 GaL16V8aS-20EB1 GaL16V8aS-20EB3 GaL16V8aS-20EC1 GaL16V8aS-20EC3 GaL16V8aS-20HB1 GaL16V8aS-20HB3 GaL16V8aS-20HC1 GaL16V8aS-20HC3 GaL16V8aS-20QB1 GaL16V8aS-20QB3 GaL16V8aS-20QC1 -GaL16V8aS-20HB3 -GaL16V8aS-20EC1 -GaL16V8aS-20EC3 -GaL16V8aS-10QC3
Description	E2PROM Cmos PROGRaMMaBLE LOGIC DEVICE E2PROM的可编程逻辑器件的Cmos EMI/RFI FILTER IGBT MODULE, TRENCH, 600v, 6 PaCK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600v; Current, Ic continuous a max:174a; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400a; Temperature, Tj RoHS Compliant: Yes IGBT MODULE, 6 PaCK 600vIGBT MODULE, 6 PaCK 600v; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600v; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24a; Current, Icm pulsed:22a; power, Pd:1700W; Time, rise:30ns; EPROM Cmos Programmable Logic Device
File Size	736.53K / 14 Page	View it Online	Download Datasheet

For 600v 7a a mos power transistor Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

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