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Amphenol, Corp.
SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPP4953S8TG SPP4953 SPP4953S8RG
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| OCR Text |
...0m@VGS=- 6V -30V/-3.7a,RDS(ON)= 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximu...a a a W /W
-6.2 -4.0 -30 -2.3 2.8 1.8 -55/150 -55/150 70
2006/10/16 Ver.1
Page 2
SPP49... |
| Description |
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
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| File Size |
213.45K /
8 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM2832CY TSM2832
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| OCR Text |
... (on), Vgs @ 2.5V, Ids @ 3.1a = 90m
Pin assignment: 1. Gate 2. Drain 3. Source
Features
advanced trench process technology High densi...a a W
PD
Operating Junction Temperature Operating Junction and Storage Temperature Range
TJ... |
| Description |
20V N-Channel Enhancement Mode MOSFET
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| File Size |
166.77K /
5 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM3442CX6 TSM3442
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| OCR Text |
... (on), Vgs @ 2.5V, Ids @ 3.1a = 90m
Features
advanced trench process technology High density cell design for ultra low on-resistance N-C...a a W
Operating Junction Temperature Operating Junction and Storage Temperature Range
TJ TJ, T... |
| Description |
20V N-Channel Enhancement Mode MOSFET
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| File Size |
164.33K /
3 Page |
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it Online |
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Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM4405P
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| OCR Text |
...), Vgs @ - 1.8V, Ids @ - 4.0a = 90m
S
S
D
G
Patent Pending Description
Bump Side View
TSM4405P is new low cost, state o...a SC-70 Excellent thermal and electrical capabilities Lead free solder bumps available
Block Diag... |
| Description |
Single P-Channel 1.8V Specified MicroSURF MOSFET
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| File Size |
179.75K /
6 Page |
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it Online |
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UTC[Unisonic Technologies]
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| Part No. |
US104S
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| OCR Text |
...a)
Tj=max: Vto=0.85V 10.0 Rd=90m Tj=Tjmax. 1.0 Tj=25 0.1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated va... |
| Description |
SCRs
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| File Size |
189.70K /
4 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
VNQ690SPTR-E VNQ690SP-E
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| OCR Text |
90m (*)
Figure 1. Package
Iout
10a
VCC
36V
(*) Per each channel
s OUTPUT
CURRENT PER CHaNNEL: 10a s CMOS COMPaTIBLE INPUTS s...a monolithic device made by using| STMicroelectronics VIPower M0-3 Technology, intended for driving ... |
| Description |
QUaD CHaNNEL HIGH SIDE DRIVER
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| File Size |
185.32K /
20 Page |
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it Online |
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WEITRON[Weitron Technology]
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| Part No. |
WT2310
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| OCR Text |
... Design For Low RDS(ON) RDS(ON)<90m@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23...a
Operating Junction and Storage Temperature Range
TJ, Tstg
Device Marking
WT2310=2310
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| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
617.40K /
6 Page |
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it Online |
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WEITRON[Weitron Technology]
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| Part No. |
WTD9575
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| OCR Text |
...esign For Low RDS(ON) R DS(ON) <90m @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Packag...a
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25C) , (... |
| Description |
Surface Mount P-Channel Enhancement Mode POWER MOSFET
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| File Size |
398.20K /
6 Page |
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it Online |
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WEITRON[Weitron Technology]
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| Part No. |
WTK9435
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| OCR Text |
...S(ON)<55m @VGS = -10V * RDS(ON)<90m @VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching
1
Description:
The...a a W C/W C C
Maximax Junction-to-ambient Operating Junction Temperature Range Storage Temperatur... |
| Description |
Surface Mount P-Channel Enhancement Mode MOSFET
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| File Size |
1,390.83K /
6 Page |
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it Online |
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Price and Availability
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