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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23C16205DSG
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| OCR Text |
...ss ground n.c no connection 16m-bit (1mx16 /512kx32) cmos mask rom the km23c16205dsg is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 1,048,576 x 16 bit(word mode) or ... |
| Description |
16M-bit (1mx16 /512Kx32) CMOS MASK ROM(16M(1mx16 /512Kx32) CMOS掩膜ROM)
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| File Size |
69.43K /
5 Page |
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Download Datasheet
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Oki Electric Industry Co., Ltd.
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| Part No. |
MSC23CV16458D-XXBS4 MSC23CV16458D MSC23CV16458D-60BS4
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| OCR Text |
bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23CV16458D-xxBS4 is an 1,048,576-word x 64-bit CMOS dynamic random access memory module which is composed of four 16Mb(1mx16) DRAMs in TSOP packages mounted with f... |
| Description |
1M X 64 EDO DRAM MODULE, 60 ns, DMA144 SODIMM-144
From old datasheet system
1,048,576-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
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| File Size |
54.39K /
10 Page |
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it Online |
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Macronix International Co., Ltd.
http://
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| Part No. |
MX29LV160BBTC-70G MX29LV160BBTC-90G MX29LV160BBTI-70G MX29LV160BBTI-90G MX29LV160BTXBC-70G MX29LV160BTXBC-90G MX29LV160BTTI-90G MX29LV160BTXBI-90 MX29LV160BTXBI-90G MX29LV160BBMI-70 MX29LV160BBXEC-90 MX29LV160BBXEC-70G MX29LV160BBXEC-90G MX29LV160BTTI-70G MX29LV160BTTC-70 MX29LV160BTTC-70G MX29LV160BTXEI-90G MX29LV160BBXEI-90 MX29LV160BTMI-70 MX29LV160BBXBI-70G MX29LV160BBXBC-90G MX29LV160BBXBC-70G MX29LV160BTXBI-70G MX29LV160BBXBI-90G
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| OCR Text |
bit [2mx8/1mx16] cmos single voltage 3v only flash memory erase operation completion. ? ready/busy pin (ry/by) - provides a hardware method of detecting program or erase operation completion. sector protection - hardware method to disable... |
| Description |
16M-bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
10A 45V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
10A 60V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
10A 80V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
MICA RoHS Compliant: No
1 A 20 V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000
1 A 20 V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
Silver Mica Capacitor; Capacitance:7pF; Capacitance Tolerance: 0.5pF; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
Silver Mica Capacitor; Capacitance:3pF; Capacitance Tolerance: /- 0.5pF; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
Silver Mica Capacitor; Capacitance:8pF; Capacitance Tolerance: /- 0.5pF; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
1A 100V Schottky Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000
10A 90V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
10A 100V H-Series Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50
16M-bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
16M-bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO44
16M-bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1,600位[2Mx8/1mx16] CMOS单电V时仅闪存
16M-bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
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| File Size |
771.92K /
63 Page |
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it Online |
Download Datasheet |
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ALSC[Alliance Semiconductor Corporation]
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| Part No. |
AS29LV160T AS29LV160 AS29LV160B
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| OCR Text |
...- DQ7 DATA polling - DQ6 toggle bit - RY/BY output * Erase suspend/resume - Supports reading data from or programming data to a sector not being erased * Low VCC write lock-out below 1.5V * 10 year data retention at 150C * 100,000 write/era... |
| Description |
3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
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| File Size |
253.15K /
29 Page |
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it Online |
Download Datasheet |
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Price and Availability
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