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Coilcraft Inc |
Part No. |
LPO4815-104KLB
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Description |
General Purpose Inductor, 100uH, 10%, 1 Element, Ferrite-Core, SMD, 1918, ROHS COMPLIANT
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Tech specs |
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Official Product Page
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Coilcraft Inc |
Part No. |
LPO4815-152MXB
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Description |
General Purpose Inductor, 1.5uH, 20%, 1 Element, Ceramic-Core, SMD, ROHS COMPLIANT
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Tech specs |
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Official Product Page
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Coilcraft Inc |
Part No. |
LPO4815-222MLB
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Description |
General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1918, ROHS COMPLIANT
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Official Product Page
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Part No. |
1N4800D 1N4795B 1N4815A 1N5443B
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Description |
100 pF, 17 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 39 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
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File Size |
140.12K /
1 Page |
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it Online |
Download Datasheet |
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Coilcraft Inc |
Part No. |
LPO4815-224KXB
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Description |
General Purpose Inductor, 220uH, 10%, 1 Element, Ceramic-Core, SMD, ROHS COMPLIANT
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Official Product Page
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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it Online |
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Coilcraft Inc |
Part No. |
LPO4815-392MLB
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Description |
General Purpose Inductor, 3.9uH, 20%, 1 Element, Ferrite-Core, SMD, 1918, ROHS COMPLIANT
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Tech specs |
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Official Product Page
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Coilcraft Inc |
Part No. |
LPO4815-472MXB
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Description |
General Purpose Inductor, 4.7uH, 20%, 1 Element, Ceramic-Core, SMD, ROHS COMPLIANT
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Tech specs |
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Official Product Page
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Coilcraft Inc |
Part No. |
LPO4815-683KLB
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Description |
General Purpose Inductor, 68uH, 10%, 1 Element, Ferrite-Core, SMD, 1918, ROHS COMPLIANT
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Tech specs |
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Official Product Page
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Coilcraft Inc |
Part No. |
MSS1048-153MLC
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Description |
General Purpose Inductor, 15uH, 20%, 1 Element, Ferrite-Core, SMD, 4039, CHIP, 4039
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Tech specs |
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Official Product Page
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Coilcraft Inc |
Part No. |
LPO4815-103KXC
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Description |
General Purpose Inductor, 10uH, 10%, 1 Element, Ceramic-Core, SMD, ROHS COMPLIANT
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Tech specs |
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Official Product Page
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Coilcraft Inc |
Part No. |
LPO4815-152MLC
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Description |
General Purpose Inductor, 1.5uH, 20%, 1 Element, Ferrite-Core, SMD, 1918, ROHS COMPLIANT
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Tech specs |
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Official Product Page
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Bom2Buy.com
Price and Availability
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