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  DAIDM-30J Datasheet PDF File

For DAIDM-30J Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    RJK0630JPE RJK0630JPE-15

Renesas Electronics Corporation
Part No. RJK0630JPE RJK0630JPE-15
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 109.40K  /  7 Page

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HUA FENG CIRCUIT





    30JL2C41 30JL2C4106

Toshiba Semiconductor
Part No. 30JL2C41 30JL2C4106
Description 30 A, 600 V, SILICON, RECTIFIER DIODE
SWITCHING MODE POWER SUPPLY APPLICATON

File Size 285.23K  /  4 Page

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    GT30J12106

Toshiba Semiconductor
Part No. GT30J12106
Description Silicon N Channel IGBT High Power Switching Applications

File Size 177.50K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
Part No. MIG30J901 MIG30J901H
Description INTEGRATED GTR MODULE 综合滋养模块

File Size 766.84K  /  11 Page

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    GT30J10106 GT30J101

Toshiba Semiconductor
Part No. GT30J10106 GT30J101
Description Silicon N Channel IGBT High Power Switching Applications

File Size 189.08K  /  6 Page

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    FDMA1430JP

Fairchild Semiconductor
Part No. FDMA1430JP
Description Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A

File Size 203.42K  /  8 Page

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    D30JCT120V

Shindengen Electric Mfg.Co.Ltd
Part No. D30JCT120V
Description Bridge Diode

File Size 166.62K  /  4 Page

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    TRW INC
Part No. TDC1030J6A
Description 64 X 9 OTHER FIFO, 65 ns, CDIP28

File Size 428.82K  /  14 Page

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Part No. MSC30430JT
Description 1 ELEMENT, 43 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR

File Size 56.41K  /  3 Page

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    TOSHIBA
Part No. MG30J6ES50
Description GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

File Size 91.68K  /  3 Page

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For DAIDM-30J Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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