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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDB4050 NDP4050
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| OCR Text |
...rchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche... |
| Description |
0 OHM 1% 1/20W SMT (0402) CHIP RES 15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
65.89K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDC631N
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| OCR Text |
...rchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones,... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
238.99K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDH833N
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| OCR Text |
...rchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltag... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
218.90K /
10 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDH834P
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| OCR Text |
...rchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltag... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
81.22K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDH854P
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| OCR Text |
...rchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltag... |
| Description |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
84.65K /
8 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
NSTB60BDW1T1 NSTB60BDW1T1/D NSTB60BDW1T1-D NSTB60ADW1T1
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| OCR Text |
...ype of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual te... |
| Description |
PNP General Purpose and NPN Bias Resistor Transistor Combination
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| File Size |
81.74K /
8 Page |
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Microchip
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| Part No. |
MCP6L92T-E/MSVAO
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| OCR Text |
...hz to 10 hz input noise voltage density e ni 9 . 4n v / ? hz f = 10 khz input noise current density i ni 3f a / ? hz f = 1 khz table 1-3: temperature specifications electrical characteristics: unless otherwise indicated, all limits are spe... |
| Description |
Linear- Op Amps
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| File Size |
1,372.37K /
36 Page |
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it Online |
Download Datasheet |
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Price and Availability
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