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Ruichips Semiconductor Co., Ltd
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| Part No. |
RU30E30L
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| OCR Text |
...zed effective transient v ds - drai n - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 2 4 www. ruichips .com ru 30 e 30 l typical characteristics output characte... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
276.77K /
9 Page |
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it Online |
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Ruichips Semiconductor Co., Ltd
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| Part No. |
RU4099Q RU4099R
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| OCR Text |
...eristics output characteristics drai n - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage rds(on) -... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
463.21K /
12 Page |
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it Online |
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Diodes Inc.
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| Part No. |
DMN3052L-7
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| OCR Text |
... equivalent circuit source gate drai n d g s top view
dmn3052l document number: ds31406 rev. 4 - 2 2 of 6 www.diodes.com july 2009 ? diodes incorporated dmn3052l electrical characteristics @t a = 25c unless othe... |
| Description |
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| File Size |
149.26K /
6 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFF634
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| OCR Text |
...1 0 a , v d s = 0 v 2 0 - - v drai n c u t ? o f f c ur r e n t i d ss v d s = 2 0 0 v , v g s = 0 v - - 1 a drain ? s o ur ce bre a k d o w n v ol t ag e v ( b r ) d ss i d = 25 0 a , v g s = 0 v 2 5 0 - - v b rea k v o l ta g e t e mp... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
681.27K /
7 Page |
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it Online |
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