ghz General Purpose Gallium Arsenide FET Technical Data
ATF-25735
Features
* High Output Power: 19.0 Bm Typical P 1 dB at 4 ghz * High ...3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 50...
ghz General Purpose Gallium Arsenide FET Technical Data
ATF-26836
Features
* High Output Power: 18.0 dBm Typical P 1 dB at 12 ghz * Hig...3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization sys...
ghz General Purpose Gallium Arsenide FET Technical Data
ATF-26884
Features
* High Output Power: 18.0 dBm Typical P 1 dB at 12 ghz * Hig...3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization sys...
... intercept in the 450 MHz to 10 ghz frequency range.
Note:
1. From the same PHEMT FET family, the larger geometry ATF-33143 may also be co...3] 725 17 160 -65 to 160 165
Notes: 1. Operation of this device above any one of these parameters m...
Description
评估板,亚欧信托基金X14300兆赫930-1990兆赫频率 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ghz Ultra Low Noise Pseudomorphic HEMT Technical Data
ATF-36077
Features
* PHEMT Technology * Ultra-Low Noise Figure: 0.5 dB Typical at 12 ghz 0.3 dB Typical at 4 ghz * High Associated Gain: 12 dB Typical at 12 ghz 17 dB Typical at 4 G...
ghz Surface Mount Pseudomorphic HEMT Technical Data
ATF-36163
Features
* Low Minimum Noise Figure: 1 dB Typical at 12 ghz 0.6 dB Typica...3 -3 -3.5 Idss 180 +10 150 -65 to 150 Thermal Resistance: ch-c = 160C/W
Note: 1. Operation of this ...
ghz Medium Power Gallium Arsenide FET Technical Data
ATF-44101
Features
* High Output Power: 32.0 dBm Typical P 1 dB at 4 ghz * High Ga...3] Channel Temperature Storage Temperature Units V V V mA W C C Absolute Maximum [1] +14 -7 -16 IDSS...
ghz Medium Power Gallium Arsenide FET Technical Data
ATF-45101
Features
* High Output Power: 29.0 dBm Typical P 1 dB at 4 ghz * High Ga...3] Channel Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] +14 -7 -16 IDSS ...
ghz Medium Power Gallium Arsenide FET Technical Data
ATF-45171
Features
* High Output Power: 29.0 dBm Typical P 1 dB at 4 ghz * High Ga...3] Channel Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] +14 -7 -16 IDSS ...
ghz Medium Power Gallium Arsenide FET Technical Data
ATF-46101
Features
* High Output Power: 27.0 dBm Typical P 1 dB at 4 ghz * High Ga...3.5 450 -2.0
Note: 1. RF Performance is determined by packaging and testing 10 samples per wafer....