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  ghz-3.6 Datasheet PDF File

For ghz-3.6 Found Datasheets File :: 25289    Search Time::1.203ms    
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    ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884
OCR Text GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features * High Output Power: 18.0 dBm Typical P 1 dB at 12 GHz * Hig...3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization sys...
Description 2-16 GHz General Purpose Gallium Arsenide FET

File Size 39.76K  /  4 Page

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    ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33

ETC
HP[Agilent(Hewlett-Packard)]
Part No. ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33
OCR Text ... intercept in the 450 MHz to 10 GHz frequency range. Note: 1. From the same PHEMT FET family, the larger geometry ATF-33143 may also be co...3] 725 17 160 -65 to 160 165 Notes: 1. Operation of this device above any one of these parameters m...
Description 评估板,亚欧信托基金X14300兆赫930-1990兆赫频率
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 111.58K  /  15 Page

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    ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features * PHEMT Technology * Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz * High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 G...
Description 1.5-18GHz surface mount pseudomorphic HEMT
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

File Size 41.62K  /  4 Page

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    ATF-36163 ATF-36163-BLK ATF-36163-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features * Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typica...3 -3 -3.5 Idss 180 +10 150 -65 to 150 Thermal Resistance: ch-c = 160C/W Note: 1. Operation of this ...
Description 1.5-18 GHz Surface Mount Pseudomorphic HEMT

File Size 84.64K  /  10 Page

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features * High Output Power: 32.0 dBm Typical P 1 dB at 4 GHz * High Ga...3] Channel Temperature Storage Temperature Units V V V mA W C C Absolute Maximum [1] +14 -7 -16 IDSS...
Description 2-8 GHz Medium Power Gallium Arsenide FET

File Size 60.35K  /  3 Page

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    ATF-45101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45101
OCR Text GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features * High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * High Ga...3] Channel Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] +14 -7 -16 IDSS ...
Description 2-8 GHz Medium Power Gallium Arsenide FET

File Size 40.00K  /  3 Page

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    ATF-45171

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45171
OCR Text GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features * High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * High Ga...3] Channel Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] +14 -7 -16 IDSS ...
Description 2-8 GHz Medium Power Gallium Arsenide FET

File Size 39.13K  /  3 Page

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    ATF-46101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-46101
OCR Text GHz Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features * High Output Power: 27.0 dBm Typical P 1 dB at 4 GHz * High Ga...3.5 450 -2.0 Note: 1. RF Performance is determined by packaging and testing 10 samples per wafer....
Description 2-10 GHz Medium Power Gallium Arsenide FET

File Size 40.16K  /  3 Page

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    ATF-46171

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-46171
OCR Text GHz Medium Power Gallium Arsenide FET Technical Data ATF-46171 Features * High Output Power: 27.0 dBm Typical P 1 dB at 4 GHz * High Ga...3.5 450 -2.0 5-101 5965-8729E ATF-46171 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT...
Description 2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)

File Size 39.26K  /  3 Page

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    BAP63-03

Leshan Radio Company, Ltd.
乐山无线电股份有限公
LRC[Leshan Radio Company]
Part No. BAP63-03
OCR Text ...ance * For applications up to 3 GHz. APPLICATIONS * RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD323 small SMD plastic package. BAP63 - 03 1 2 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accorda...
Description Silicon PIN diode 硅PIN二极

File Size 108.25K  /  2 Page

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