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For idss. Found Datasheets File :: 28451 Search Time::1.844ms
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				Excelics Semiconductor, Inc.
Part No.	EMP107-Q5
OCR Text	...ch tone pout 14dbm, 7v, 60%+ 10%idss -40 -37 dbc input rl input return loss -10 db output rl output return loss -5 db idss saturate drain current v ds =3v, v gs =0v 240 310 370 ma v dd ...
Description	5.8 - 8.0 GHz Surface-Mounted PA
File Size	135.75K / 4 Page	View it Online	Download Datasheet

				MOTOROLA INC Motorola, Inc. Motorola Inc ON Semiconductor
Part No.	J112_D ON0286 J112
OCR Text	...dth = 300 s, Duty Cycle = 3.0%. IDSS rDS(on) Cdg(on) + Csg(on) Cdg(off) Csg(off) 5.0 -- -- -- 50 28 mAdc pF -- -- 5.0 5.0 pF pF (Replaces J111/D) Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, I...
Description	JFET CHOPPER TRANSISTOR (N-CHANNEL- DEPLETION) From old datasheet system CASE 29-4, STYLE 5 TO-2 (TO-26AA)
File Size	109.37K / 4 Page	View it Online	Download Datasheet

				Excelics Semiconductor
Part No.	EIA1011-4P
OCR Text	....7 - 11.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 35.5 36.5 35 35.5 dbm g 1db gain at 1db compression f =10.7 - 11.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 8 9 7 8 db pae powe...
Description	10.7-11.7GHz 4W Internally Matched Power FET
File Size	43.89K / 1 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MMDF3C03HD_D ON2176 MMDF3C03HD
OCR Text	...igh Speed, With Soft Recovery * IDSS Specified at Elevated Temperature * Mounting Information for SO-8 Package Provided MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current -...
Description	Medium Power Surface Mount Products From old datasheet system COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS
File Size	271.04K / 12 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SJ364
OCR Text	... to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC \| Yfs \| RDS(on) Conditions VDS = -10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VGS = 0 VDS = -10V, VGS = 0, f = 1MH...
Description	Silicon P-Channel Junction FET
File Size	30.25K / 2 Page	View it Online	Download Datasheet

				Vishay
Part No.	P1086 70259
OCR Text	...ating Current V(BR)GSS VGS(off) IDSS IGSS IG IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -1 mA VDS = -20 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 85_C VDG = -15 V, ID = -1 mA VGS = 12 V D i C ff Current Drain Cutoff C ID(off) VDS = -15 V 15 VGS ...
Description	P-Channel JFET From old datasheet system
File Size	71.32K / 5 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMSF3350-D
OCR Text	...igh Speed, With Soft Recovery * IDSS Specified at Elevated Temperature * Avalanche Energy Specified * Miniature SO-8 Surface Mount Package - Saves Board Space SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 11 mW D G S MARKING DIAGRAM...
Description	WaveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products
File Size	137.16K / 12 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SK2171 1023
OCR Text	...10A, VDS=0 IGSS VGS=-20V, VDS=0 IDSS** VDS=10V, VGS=0 VGS(off) \| yfs \|1 \| yfs \|2 VDS=10V, ID=100A VDS=10V, ID=10mA, f=1kHz VDS=10V, VGS=0, f=1kHz Conditions Ratings min -40 -1.0 40* -2.0 10 22 -3.0 15 30 75* -5.0 typ max Unit V nA mA V mS m...
Description	N-Channel Junction Silicon FET From old datasheet system
File Size	178.68K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BF246A BF246B BF246C BF247C BF247A BF247B
OCR Text	...n and source connections * High IDSS range * Frequency up to 450 MHz. APPLICATIONS * VHF and UHF amplifiers * Mixers * General purpose switching. DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in...
Description	N-channel silicon junction field-effect transistors UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
File Size	37.02K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips
Part No.	BUK109-50GS
OCR Text	...cified SYMBOL V(CL)DSS V(CL)DSS IDSS IDSS IDSS RDS(ON) PARAMETER Drain-source clamping voltage Drain-source clamping voltage CONDITIONS VIS = 0 V; ID = 10 mA MIN. 50 TYP. 0.5 1 10 35 45 MAX. 70 10 20 100 50 60 UNIT V V A A A m m VIS = 0 ...
Description	PowerMOS transistor TOPFET PowerMOS transistor TOPFET(功率MOS晶体管TOPFET)
File Size	117.03K / 12 Page	View it Online	Download Datasheet

For idss. Found Datasheets File :: 28451 Search Time::1.844ms
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