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  igbt-3 Datasheet PDF File

For igbt-3 Found Datasheets File :: 11698    Search Time::1.5ms    
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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ...ely between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development ...3 51 68 26 23 150 62 304 250 22 23 280 112 500 660 MAX 250 2.0 2.1 2.5 6.0 250 60 78 350 350 295 175...
Description 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text ...ely between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low condu...3 51 68 26 23 150 62 150 304 250 MAX 250 2.0 2.1 2.5 6.0 250 60 78 350 350 UNITS V V A mA V V V nA A...
Description From old datasheet system
27A, 600V, UFS Series N-Channel IGBTs
27A/ 600V/ UFS Series N-Channel IGBTs

File Size 111.87K  /  7 Page

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    HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and b...3.0 VCE(PK) = 480V VCE(PK) = 600V 80 24 TYP 1.65 1.85 1.80 2.0 5.0 MAX 250 2.0 2.0 2.2 2.2 2.4 6.0 1...
Description 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB

File Size 151.95K  /  8 Page

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    TOSHIBA
Part No. GT40J321
OCR Text igbt gt40j321 current resonance inverter switching application ? frd included between emitter and collector ? enhancement mod...3.0 ? 6.0 v collector-emitter saturation voltage v ce (sat) i c = 40 a, v ge = 15 v ? 2....
Description IGBT for soft switching applications

File Size 368.74K  /  6 Page

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    HGTP12N60D1

INTERSIL[Intersil Corporation]
Part No. HGTP12N60D1
OCR Text IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * 12A, 600V * Latch Free Operation * Typical Fall Time...3 3-38 Specifications HGTP12N60D1 Electrical Specifications TC = +25oC, Unless Otherwise Spec...
Description 12A/ 600V N-Channel IGBT
12A, 600V N-Channel IGBT

File Size 31.28K  /  4 Page

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    SEMIX452GAL126HDS

Semikron International
Part No. SEMIX452GAL126HDS
OCR Text igbt modules semix452gal126hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient...3 3.0 m ? t j =125c 3.7 4.5 m ? v ge(th) v ge =v ce , i c =12ma 5 5.8 6.5 v i ces v ge =0v v ce = 12...
Description IGBT Modules

File Size 416.33K  /  5 Page

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    VISHAY SEMICONDUCTORS
Part No. GB50NA120UX
OCR Text igbt sot-227 (ultrafast igbt), 50 a gb50na120ux vishay semiconductors document number: 93101 for technical ques tions within your regio...3.22 v s ot-227 absolute maximum ratings parameter symbol test conditions max. units collector to em...
Description 84 A, 1200 V, N-CHANNEL IGBT

File Size 174.00K  /  10 Page

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    DD400S45KL3B5

Infineon Technologies AG
Part No. DD400S45KL3B5
OCR Text igbt-module igbt-modules preparedby:mw approvedby:dts dateofpublication:2013-07-29 revision:3.0 hochisolierendesmodul highinsulatedmodule v ces = 4500v i c nom = 400a / i crm = 800a typischeanwendungen typicalapplications ? ...
Description Technische Information / Technical Information

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    HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text ...0BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the be...3.7 6.8 10.5 53 60 22 15 160 130 450 390 MAX 250 1.5 2.7 4.2 250 65 72 25 20 180 160 600 450 UNITS V...
Description 3.3V 72-mc CPLD
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

File Size 175.44K  /  8 Page

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