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low-trr Datasheet PDF File

For low-trr Found Datasheets File :: 27293 Search Time::2ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ544
OCR Text	Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D ...trr (ns) 200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 100 30 3 1 0.3 Rever...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.22K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ545
OCR Text	Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220CFM D ...trr (ns) 100 50 20 5 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) Dynamic ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.81K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ546
OCR Text	Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM D ...trr (ns) 10000 3000 1000 300 100 100 50 Capacitance C (pF) 200 Coss 20 10 5 -0.1 d...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.21K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ547
OCR Text	Low on-resistance R DS(on) = 0.16 typ. * 4 V gete drive devices * High speed switching Outline TO-220FM D G 12 S 1. Gate 2....trr (ns) 5000 200 100 50 1000 Ciss 300 Coss 100 30 Crss 20 10 5 -0.1 di / dt = 50 A / s ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.45K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ548
OCR Text	Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D G...trr (ns) 10000 3000 1000 300 100 200 100 50 Capacitance C (pF) Coss 20 10 5 -0.1 di /...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.21K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	2SJ549 2SJ549L 2SJ549S
OCR Text	Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline LDPAK 4 4 D 1 1 ...trr (ns) 100 50 20 5 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) Dynamic ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
File Size	54.89K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SJ550 2SJ550L 2SJ550S
OCR Text	Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 4 D 1 ...trr (ns) 10000 3000 1000 300 100 100 50 Capacitance C (pF) 200 Coss 20 10 5 -0.1 d...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	55.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ551 2SJ551L 2SJ551S
OCR Text	Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 4 D 1 ...trr (ns) 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	54.47K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text	Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G 1 4...trr (ns) 200 100 50 di / dt = 50 A / s VGS = 0, Ta = 25 C Capacitance C (pF) Coss 20 10 ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching Power switching MOSFET
File Size	55.15K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ553 2SJ553L 2SJ553S
OCR Text	Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G 1 4...trr (ns) 200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 100 30 3 1 0.3 Rever...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	55.75K / 9 Page	View it Online	Download Datasheet

For low-trr Found Datasheets File :: 27293 Search Time::2ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |