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rg-180 u Datasheet PDF File

For rg-180 u Found Datasheets File :: 4044 Search Time::1.156ms
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				INTERSIL[Intersil Corporation]
Part No.	HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text	... 2. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...180 280 220 400 640 20 12 225 350 220 1 1 MAX 30 16 250 350 500 700 25 16 300 400 1.2 1.1 0.75 uNITS...
Description	From old datasheet system 25A 1200V NPT Series N-Channel IGBT 25A, 1200V, NPT Series N-Channel IGBT 25A/ 1200V/ NPT Series N-Channel IGBT
File Size	79.50K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text	... 2. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...180 160 600 450 uNITS V A A mA V V V nA A V nC nC ns ns ns ns J J Collector to Emitter Breakdown ...
Description	From old datasheet system 21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
File Size	88.17K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFRu4105 IRFu4105 IRFR4105
OCR Text	...- 49 --- ID = 16A ns --- 31 --- RG = 18 --- 40 --- RD = 1.8, See Fig. 10 Between lead, --- 4.5 --- nH 6mm (0.25in.) G from package --- 7.5 ...180 A V G S , G ate-to-So urce Vo ltag e (V) T J , Junction T em perature (C ) Fig 3. Ty...
Description	Power MOSFET(Vdss=55V / Rds(on)=0.045ohm / Id=27A) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?) HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?
File Size	140.69K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFu220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NTRR
OCR Text	...VDD = 100V --- ID = 2.9A ns --- RG = 24 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- ...180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5A I(D) \| TO-252AA 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 5A条（丁）\|52AA Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
File Size	130.56K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFu2405 IRFR2405
OCR Text	... 28V 130 --- ID = 34A ns 55 --- RG = 6.8 78 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die...180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A? Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A) Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?)
File Size	125.44K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFu2407 IRFR2407
OCR Text	...= 38V 90 --- ID = 25A ns 65 --- RG = 6.8 66 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die...180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A? Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A) HEXFET? Power MOSFET Power MOSFET(Vdss=75V Rds(on)=0.026ohm Id=42A) Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?)
File Size	125.42K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFu2905Z IRFR2905 IRFR2905Z
OCR Text	...GS(th) gfs IDSS IGSS Qg Qgs Qgd RG td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown...180 T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10...
Description	55V Single N-Channel HEXFET Power MOSFET in a D-Pak package 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package AuTOMOTIVE MOSFET
File Size	209.23K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFu3505 IRFR3505
OCR Text	...- VDD = 28V --- ID = 30A ns --- RG = 6.8 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S ...180 270 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) N...
Description	AuTOMOTIVE MOSFET
File Size	580.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFu3704 IRFR3704
OCR Text	...VDD = 10V --- ID = 28.4A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz Avalanche Characteristics Symbol E...180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer...
Description	Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A? Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A) Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A?)
File Size	113.36K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFu3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706TRL IRFR3706TRR IRFu3706PBF
OCR Text	...- VDD = 10V --- ID = 28A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz Avalanche Characteristics Symbol E...180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer...
Description	20V Single N-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=75A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A? 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
File Size	131.57K / 10 Page	View it Online	Download Datasheet

For rg-180 u Found Datasheets File :: 4044 Search Time::1.156ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |