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  rg-188 Datasheet PDF File

For rg-188 Found Datasheets File :: 544    Search Time::1.859ms    
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    INTERSIL[Intersil Corporation]
Part No. FRK264D FRK264H FRK264R FN3233
OCR Text ...Pulse Width = 3s Period = 300s, Rg = 10 0 VGS 10 (See Test Circuit) MIN 250 2.0 6 93 188 3 27 44 0.6 MAX 4.0 100 100 1 0.025 0.25 100 4.28 0.120 150 800 ns 700 500 28 372 754 16 110 nc 178 1.8 2000 0.42 30 V ns oC/W UNITS V V nA nA mA...
Description 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
34A/ 250V/ 0.120 Ohm/ Rad Hard/ N-Channel Power MOSFETs

File Size 60.49K  /  7 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRL3102S
OCR Text ...- VDD = 10V --- ID = 35A ns --- RG = 9.0W VGS = 4.5V , --- RD = 0.28W , Between lead, nH 7.5 --- and center of die contact 2500 --- VGS = 0...188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.1...
Description Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)\u003d0.013瓦特,身份证\u003d 61A条)
Power MOSFET(Vdss=20V Rds(on)=0.013w Id=61A)

File Size 86.82K  /  8 Page

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    STI5500

STMicroelectronics
ST Microelectronics
Part No. STI5500
OCR Text ... 102 103 GND V_REF_DAC_RG I_REF_DAC_RG MEMCLKOUT B_OUT Y_OUT GND GND V_REF_DAC_YC I_REF_DAC_YC GND GN...188 TCK 186 TDI 189 TDO 187 TMS 190 NOT_TRST SYSTEM USE 28 BRM2 27 BRM1_OR_BOOTFROMROM 26 29 116 BRM...
Description SET TOP BOX / DVD BACKEND DECODER WITH INTEGRATED HOST PROCESSOR

File Size 317.22K  /  11 Page

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    IRFZ14S

International Rectifier
Part No. IRFZ14S
OCR Text ... VDD = 30V --- I D = 10A ns --- RG = 24 --- RD = 2.7, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 300 --- VGS = 0V 160 -...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description HEXFET? POWER MOSFET

File Size 230.85K  /  10 Page

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    LINEAR[Linear Integrated Systems]
Linear Integrated Syste...
Part No. LS3954-8 LS3958 LS3954 LS3954A LS3955 LS3956
OCR Text ... to 10V ID= 200A ID= 200A RG= 10M VDS= 20V VGS= 0 f= 100Hz NBW= 6Hz VDS= 20V ID= 200A f= 10Hz NBW= 1Hz VDS= 20V VDG= 20V VGS= 0 f= 1MH...188 (4.78) 0.197 (5.00) S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.228 (5.79) 0.244 (6...
Description LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

File Size 30.06K  /  2 Page

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    LS421 LS423 LS426 LS421-6 LS422 LS424 LS425

Linear Integrated Syste...
LINEAR[Linear Integrated Systems]
Linear Systems
Part No. LS421 LS423 LS426 LS421-6 LS422 LS424 LS425
OCR Text ... VGS= 0 ID= 30A ID= 30A ID= 30A RG= 10M --- 90 90 --- NF en --- -20 10 1.0 70 dB nV/Hz ID= 30A f= 10Hz ID= 30A f=...188 (4.78) 0.197 (5.00) S1 D1 D1 G1 SS N/C G1 1 2 3 4 8 7 6 5 G2 N/C SS G2 D2 D2 S2 S2 ...
Description LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

File Size 23.50K  /  2 Page

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    IRF[International Rectifier]
Part No. IRHNA597160 IRHNA593160
OCR Text ...D = -50V, ID = -47A, VGS =-12V, RG = 2.35, IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-...188 -5.0 230 1.6 Test Conditions A V ns C Tj = 25C, IS = -47A, VGS = 0V A Tj = 25C, IF = -47A...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

File Size 126.64K  /  8 Page

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    IXFHB24N50 IXFMB24N50 IXFTB24N50 IXFH26N50 IXFT26N50 IXFH21N50 IXFM21N50 IXFM26N50

IXYS[IXYS Corporation]
Part No. IXFHB24N50 IXFMB24N50 IXFTB24N50 IXFH26N50 IXFT26N50 IXFH21N50 IXFM21N50 IXFM26N50
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C D G = Gate, S = Source, D = Drain, TAB = Drain G 1.6 mm (0.062 in.) from case for ...188 .675 Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S) TO-268 Outline ...
Description HIPERFET POWER MOSFETS

File Size 156.57K  /  4 Page

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    NEC[NEC]
Part No. NE6500496
OCR Text ...Resistance SYMBOL VDS Tch Gcomp Rg MIN. - - - - TYP. 10 - - - MAX. 10 130 3 200 UNIT V C dBcomp ELECTRICAL CHARACTERISTICS (TA = 25 C) ...188 4.368 3.769 3.319 2.963 2.679 2.438 2.251 2.087 1.947 1.828 1.720 1.627 1.547 1.468 1.404 1.345 ...
Description 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

File Size 36.28K  /  6 Page

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    IXTM12N90 IXTH12N90

IXYS Corporation
Part No. IXTM12N90 IXTH12N90
OCR Text ...VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 33 63 32 145 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 30 55 50 50 100 50 170 45 80 0....188 .655 .675 L 7.93 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 (c) ...
Description N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.90Ω的N沟道增强B>MegaMOSFET)
MEGAMOS FET
Discrete MOSFETs: Standard N-channel Types

File Size 101.80K  /  4 Page

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For rg-188 Found Datasheets File :: 544    Search Time::1.859ms    
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