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rg-400 u Datasheet PDF File

For rg-400 u Found Datasheets File :: 7125 Search Time::1.781ms
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				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5012 APT5012WVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns...400 500 Qg, TOTAL GATE CHARGE (nC) FIGuRE 12, GATE CHARGES vs GATE-TO-SOuRCE VOLTAGE 0 0 0 ...
Description	POWER MOS V 500V 40A 0.120 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.40K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5014B2VR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 5600 737 330 234 36 115 12 15 45 7 6720 1030 500 350 54 170 24 30 70 14 ns ...400 500 Qg, TOTAL GATE CHARGE (nC) FIGuRE 12, GATE CHARGES vs GATE-TO-SOuRCE VOLTAGE 0 0 0....
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
File Size	61.78K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014BFLL APT5014SFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 35 140 1.3 15 250 525 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 1.6 6.0 13 21 T...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5014LVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 5600 737 330 234 36 115 12 15 45 7 6720 1030 500 350 54 170 24 30 70 14 ns ...400 500 Qg, TOTAL GATE CHARGE (nC) FIGuRE 12, GATE CHARGES vs GATE-TO-SOuRCE VOLTAGE 0 0 0....
Description	POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.64K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014 APT5014BLL APT5014SLL
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 1.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 35 140 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Re...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 22 88 1.3 15 250 400 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 1.9 6 15 26 Tj =...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	...me RY 6 MIN ns IN RG = 10 A 50 135 435 340 ns IM EL 4 Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 1...400 500 600 V 800 VCE 0.0 0 100 200 300 400 500 600 V 800 VCE 052-6253 Rev A EuROPE Avenue...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 16300 2210 850 675 95 320 25 20 85 12 19600 3090 1275 1000 140 480 50 40 ...400 ID, DRAIN CuRRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10S 100S C, CAPACITANCE (pF) ...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 16300 2210 850 675 95 320 25 20 85 12 19600 3090 1275 1000 140 480 50 40 125...400 ID, DRAIN CuRRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10S 100S C, CAPACITANCE (pF) ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

				http:// ADPOW[Advanced Power Technology]
Part No.	APT8015JVFR APT8015
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 14715 1470 794 690 75 275 22 20 97 15 17650 2050 1190 1035 110 410 44 40 ...400 VDS, DRAIN-TO-SOuRCE VOLTAGE (VOLTS) FIGuRE 2, TYPICAL OuTPuT CHARACTERISTICS 0 40 5V 20 4.5V...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 44A 0.150 Ohm
File Size	77.92K / 4 Page	View it Online	Download Datasheet

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