...me
RY
6
MIN
ns
IN
RG = 10
A
50 135 435 340
ns
IM EL
4
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 1...400 500 600 V 800 VCE
0.0 0 100 200 300 400 500 600 V 800 VCE
052-6253 Rev A
EuROPE
Avenue...
Description
Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT
16300 2210 850 675 95 320 25 20 85 12
19600 3090 1275 1000 140 480 50 40 125...400 ID, DRAIN CuRRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
10S 100S C, CAPACITANCE (pF)
...
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm