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  rg-6 Datasheet PDF File

For rg-6 Found Datasheets File :: 35824    Search Time::1.812ms    
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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...DD = -28V --- ID = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, nH 7.5 and center of die contact 350 --- VGS = 0V 170 --- p...6 V TJ = 25C, IS = -7.2A, VGS = 0V --- 47 71 ns TJ = 25C, IF = -7.2A --- 84 130 nC di/dt = -100A/s ...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...D = -28V --- I D = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die c...6 V TJ = 25C, IS = -7.2A, VGS = 0V --- 47 71 ns TJ = 25C, IF = -7.2A --- 84 130 C di/dt = -100A/s ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...VDD = -30V --- ID = -18A ns --- RG = 12 --- RD = 1.5, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = ...6.3 V TJ = 25C, IS = -18A, VGS = 0V --- 100 200 ns TJ = 25C, IF = -18A --- 280 520 nC di/dt = 100A/...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ... Starting TJ = 25C, L = 3.6mH RG = 25, I AS = -10A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material )....6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 100 -ID , D ra in -to -S o u rc e C u rre n t (A ) 1...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ...DD = -28V --- I D = -10A ns --- RG = 13 --- RD = 2.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings an...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    Zarlink Semiconductor
Part No. ZL40166
OCR Text ...feedback amplifier example 100r rg rf1 rf2 12r5 12r5 rf rg data sheet zl40166 3 zarlink semiconductor inc. video transmitter and receiver ...6.5 v junction temperature range -40 150 c junction to ambient resistance rth(j-a) 150 c 4 layer f...
Description High Output Current, High Speed Dual Operational Amplifier

File Size 726.81K  /  33 Page

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    NJM2732 NJM2732D NJM2732E NJM2732M NJM2732RB1 NJM2732V

ETC
New Japan Radio
Part No. NJM2732 NJM2732D NJM2732E NJM2732M NJM2732RB1 NJM2732V
OCR Text ... 40 V /V =2.5V, GV=40dB RF=2k, RG=20, RL=2k, CL=0pF Gain Ta=-40C + - Voltage Gain/Phase vs. Frequency (with Capacitive load) V /V =2.5...6 V /V =2.5V, GV=0dB, CL=100pF RS=50, RL=2k + - Phase Margin [deg] 70 Voltage Gain [dB] ...
Description DUAL OP-AMP, 5000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDIP8
Full-Swing Input and Output type Dual Operational Amplifier

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    AOD413208

Alpha & Omega Semiconductors
Alpha & Omega Semiconductor...
Part No. AOD413208
OCR Text ...d! 100% rg tested! general description the aod4132 uses advanced trench technology to provide excellent r ds(on) ,...6 m w g fs 106 s v sd 0.72 1 v i s 85 a c iss 3700 4400 pf c oss 700 pf c rss 390 pf r g 0.54 0.7 w ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 450.90K  /  6 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...0.5, VCE = 800V, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 350W...6. Typical output characteristics (Tj = 150C) 70A 60A VCE(sat), COLLECTOR-EMITTER SATURATION V...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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