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SIEMENS AG
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| Part No. |
HYB514405BJL HYB514405BJ-60 Q67100-Q2116
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| OCR Text |
...162 C ns ras to we delay time t rwd 64 C 77 C 89 C ns 15 cas to we delay time t cwd 27 C 32 C 36 C ns 15 column address to we delay time t awd 39 C 47 C 54 C ns 15 oe command hold time t oeh 10 C 13 C 15 C ns hyper page mode (edo) cycle hyp... |
| Description |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
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| File Size |
1,364.55K /
25 Page |
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it Online |
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Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
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| Part No. |
HMD1M1Z1 HMD1M1Z1-6
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| OCR Text |
...e 15 15 ms 7,13 t rwd /ras to /we delay time 50 60 ns 7 t awd column address to /we delay time 25 30 ns 7 t cpwd /cas precharge to /we delay time 30 35 ns 7 t csr /cas setup ti... |
| Description |
1Mbit(1Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design 1MbitMx1bit）快速页面模式，000刷新0针邮编，5V的设
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| File Size |
183.77K /
6 Page |
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it Online |
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SIEMENS AG
SIEMENS A G
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| Part No. |
Q67100-Q1094 HYB5117800BSJ-70
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| OCR Text |
...80 C ns ras to we delay time t rwd 68 C 80 C 95 C ns 15 cas to we delay time t cwd 31 C 35 C 45 C ns 15 column address to we delay time t awd 43 C 50 C 60 C ns 15 oe command hold time t oeh 13 C 15 C 20 C ns fast page mode cycle fast p... |
| Description |
2M x 8-Bit Dynamic RAM
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| File Size |
229.87K /
26 Page |
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it Online |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM512200L-80SJ MSM512200L-60SJ MSM512200L-60TS-K MSM512200L-XXSJ MSM512200L-XXTS-K MSM512200-XXTS-K MSM512200L-80TS-K MSM512200L-70SJ MSM512200-70TS-K MSM512200-70SJ
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| OCR Text |
...o we hold time (test mode) t rwd t rpc t csr t chr t wrp t wrh t wts t wth oe command hold time t oeh oe to data-in delay time t oed (v cc = 5 v 10%, ta = 0c to 70c) note 1, 2, 3, 11, 12 cas precharge we delay time t cpwd unit ns ... |
| Description |
1,048,576-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字2位动态随机存储器：快速页面模式型
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| File Size |
450.64K /
17 Page |
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it Online |
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Oki Electric Industry Co., Ltd.
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| Part No. |
MSC23V13258D-60BS2
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| OCR Text |
... ns 10 /ras to /we delay time t rwd 67 - 79 - 94 - ns 10 /cas precharge /we delay time t cpwd 47 - 54 - 64 - ns 10 /cas active delay time from /ras precharge t rpc 5-5-5-ns /ras to /cas set-up time (/cas before /ras) t csr 5-5-5-ns /ras to ... |
| Description |
1M X 32 EDO DRAM MODULE, 60 ns, DMA100 DIMM-100
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| File Size |
81.58K /
10 Page |
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it Online |
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Hynix Semiconductor, Inc.
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| Part No. |
GM71V18163CJ-6E
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| OCR Text |
...note max unit min t rwc 136 - t rwd 79 - t cwd 34 - t awd 49 - 14 14 14 t oeh 15 - read-modify-write cycle time / ras to /we delay time / cas to /we delay time column address to /we delay time / oe hold time from /we gm71v18163cj-6e ns ns n... |
| Description |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
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| File Size |
91.14K /
11 Page |
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it Online |
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SIEMENS AG
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| Part No. |
HYB5116160BSJ-50
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| OCR Text |
...80 C ns ras to we delay time t rwd 68 C 80 C 95 C ns 15 cas to we delay time t cwd 31 C 35 C 45 C ns 15 column address to we delay time t awd 43 C 50 C 60 C ns 15 oe command hold time t oeh 13 C 15 C 20 C ns fast page mode cycle fast p... |
| Description |
1M x 16-Bit Dynamic RAM 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
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| File Size |
274.50K /
24 Page |
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it Online |
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Price and Availability
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