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HOLTEK[Holtek Semiconductor Inc]
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| Part No. |
hT46R47-h
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| OCR Text |
... T C TM RC TM R P A 3 /P F D In s tr u c tio n R e g is te r M U X PA4 M U X fs
Ys
P r e s c a le r P A 4 /T M R
fs
Ys
MP
M ...h a n n e l A /D C o n v e rte r sTATUs PBC PB s h ifte r PA3,PA5 P o rt B P B 0 /A N 0 ~ P B 3 /A N... |
| Description |
Cost-Effective A/D Type 8-Bit OTP MCU
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| File Size |
286.59K /
42 Page |
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it Online |
Download Datasheet
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Toshiba
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| Part No. |
TPCA8057-h
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| OCR Text |
...mperature (t c = 25 ) (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d p d e ...h 3 6. 6. 6. 6. electrical characteristics (t electrical characteristics (t electrical character... |
| Description |
Field Effect Transistor
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| File Size |
283.89K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPC8010-h
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| OCR Text |
...ansfer admittance: |y fs | = 11 s (typ.) low leakage current: i dss = 10 a (max) (v ds = 30 v) enhancement mode: v th = 1.1 to 2....h 2002-03-12 2 thermal characteristics characteristics symbol max unit thermal resistance, channe... |
| Description |
Field Effect Transistor silicon N Channel MOs Type (high speed U-MOsIII) DC-DC Converters Notebook PC Applications Portable Equipment Applications
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| File Size |
176.57K /
7 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPC6109-h
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| OCR Text |
...nsfer admittance: |y fs | = 8.0 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 30 v) ? enhancement mode: v th = ...h 2010-02-01 2 marking (note 5) note 1: ensure that the channel temperature do... |
| Description |
Power MOsFET (P-ch single)
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| File Size |
277.93K /
7 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPC8063-h
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| OCR Text |
...ure storage temperature (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d e as i ar t c...h 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal ... |
| Description |
Power MOsFET (N-ch single VDss≤30V)
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| File Size |
224.55K /
9 Page |
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it Online |
Download Datasheet |
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