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HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
C6271
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| OCR Text |
...81 741
TACC1011E03 MAY. 1998 SI Printed in Japan (500)
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| Description |
HIGH VOLTAGE POWER SUPPLY SOCKET ASSEMBLY WITH TRANSIMPEDANCE AMPLIFIER
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| File Size |
24.34K /
2 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
CNA1311K
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| OCR Text |
...ode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.
(1.8) 4.0 1.0 A
With gate A S...Anode 3: Collecter 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is 0.2 2. ( ... |
| Description |
Photo Interrupter
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| File Size |
59.89K /
3 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
CNA1312K
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| OCR Text |
...ode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.
(1.8)
(1.5) With gate a side ...Anode 3: Collecter 2: Cathode 4: Emitter
*1
Output (Photo Collector to emitter voltage VCEO tr... |
| Description |
Transmissive Photosensors(Photo Interrupters)
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| File Size |
60.67K /
3 Page |
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it Online |
Download Datasheet |
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Eupec
ETC[ETC]
Electronic Theatre Controls, Inc.
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| Part No. |
D126A
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| OCR Text |
...re
Mechanische Eigenschaften Si-Element mit Druckkontakt Anzugsdrehmoment Gewicht Kriechstrecke Feuchteklasse Schwingfestigkeit Mabild Po...Anode=Gehause/case
= 21 mm Gehauseform/case design C M G typ. 20 110 25 Nm g mm C m/s 2
D 126... |
| Description |
Power Rectifier Diodes
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| File Size |
64.96K /
4 Page |
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it Online |
Download Datasheet |
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EUPEC[eupec GmbH]
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| Part No. |
D758N
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| OCR Text |
...re
Mechanische Eigenschaften Si-Element mit Druckkontakt Anprekraft Gewicht Kriechstrecke Feuchteklasse Schwingfestigkeit Mabild
Mecha...Anode-sided cooling 3 - Kathodenseitige Kuhlung / Cathode-sided cooling
0,05
Analytische Funkt... |
| Description |
Leistungsgleichrichterdioden Power Rectifier Diodes
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| File Size |
70.29K /
4 Page |
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it Online |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
F4294-09
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| OCR Text |
... 81 741
TMCP1019E01 MAY 1998 SI Printed in Japan (500)
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| Description |
MCP ASSEMBLY WITH CENTER HOLE FOR REFLECTRON MS
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| File Size |
67.57K /
2 Page |
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it Online |
Download Datasheet |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
F4655-01
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| OCR Text |
... 81 741
TMCP1020E01 MAY 1998 SI Printed in Japan (500)
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| Description |
WIDE DYNAMIC RANGE MCP ASSEMBLY FOR HELIUM LEAK DETECTOR
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| File Size |
59.22K /
2 Page |
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it Online |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
F4655-13
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| OCR Text |
... 81 741
TMCP1021E01 MAY 1998 SI Printed in Japan (500)
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| Description |
MCP ASSEMBLY FOR HIGH RESOLUTION TOF-MS
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| File Size |
63.25K /
2 Page |
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it Online |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1A91LCJ00F
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| OCR Text |
...y Photo diode Material Silicon (Si) Maximum Sensitivity wavelength (nm) 900 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Gap : 1.2mm, Slit : 0.23mm OPIC Output, Compact Transmissive Photointerrupter
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| File Size |
143.35K /
11 Page |
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it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1A91LRJ00F
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| OCR Text |
...y Photo diode Material Silicon (Si) Maximum Sensitivity wavelength (nm) 900 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Gap : 1.2mm, Slit : 0.23mm OPIC Output, Compact Transmissive Photointerrupter
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| File Size |
144.92K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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