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  t1-1 2 Datasheet PDF File

For t1-1 2 Found Datasheets File :: 35574    Search Time::1.672ms    
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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...t 1 Gate Voltage t2 VGTH t0 t1 t3 QGS1 QGS2 2 QGD Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput This can be expanded and approximated by; Drain Voltage Figure 1: Typical MOSFET switching waveform Ploss = (Irm...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...001 0.01 0.1 1 10 100 1000 P DM t1 t2 10 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 50 u 8V 5 uH S c h o t tk y - 6 A VDD 450 125nS R e p...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...20 0.1 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) www.irf.com 5 ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...20 0.1 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum E...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... .0 1 s in g le p u ls e PDM t1 t2 Z JC 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-1. Transient Thermal Res...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...INGLE PULSE 10-4 10-3 10-2 10-1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1 10 PDM 0.01 10-5 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 5-22 IRF9150 T...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ... 10 0.20 0.10 0.05 0.02 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 1 0.01 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...E PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Therma...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...E PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Imped...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ... 0.01 SINGLE PULSE 0.01 10-5 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 10-1 1 10 10-4 t 1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE 4-5 IRF9520 Typi...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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