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For v 100 Found Datasheets File :: 375247    Search Time::3.797ms    
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    PH1113-100

M/A-COM Technology Solutions, Inc.
Part No. PH1113-100
OCR Text ...0 350 -65 to +200 200 Units v v A W C C Electrical Specifications: TC = 25 5C (Room Ambient ) Parameter Test Conditions Frequency S...100 Radar Pulsed Power Transistor 100W, 1.1-1.3 GHz, 3s Pulse, 30% Duty M/A-COM Products Released, ...
Description Radar Pulsed Power Transistor

File Size 130.90K  /  3 Page

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    VISHAY SEMICONDUCTORS
Part No. BYvB32-100-E3/31
OCR Text ...nd characteristics i f(av) 18 a v rrm 50 v to 200 v i fsm 150 a t rr 25 ns v f 0.85 v t j max. 150 c case pin 2 pin 1 pin 3 to-220ab byv32 ...100 byv32-150 byv32-200 unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximu...
Description 18 A, 100 v, SILICON, RECTIFIER DIODE, TO-263AB

File Size 144.33K  /  5 Page

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    1SR124-100 1SR124-400 1SR124-200

Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
Part No. 1SR124-100 1SR124-400 1SR124-200
OCR Text ...124 - 400 400 280 400 UNIT v v v A IFSM vF IR IR(H) Trr CJ TJ TSTG 35 1.3 5 50 250 50 - 65 to + 150 - 65 to + 150 A v A A ns p...100 ~ 1SR124-400 ) FIG.1 - REvERSE RECOvERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 10 +...
Description FAST RECOvERY RECTIFIER DIODES 快速恢复整流二极管

File Size 40.55K  /  2 Page

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    EIC[EIC discrete Semiconductors]
Part No. 1SR153-100 1SR153-400 1SR153-200
OCR Text ...R153 -400 400 280 400 UNIT v v v A IFSM vF IR IR(H) Trr 35 1.3 5 50 250 50 - 65 to + 150 - 65 to + 150 A v A A ns pf C C M...100 ~ 1SR153-400 ) FIG.1 - REvERSE RECOvERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 10 +...
Description FAST RECOvERY RECTIFIER DIODES

File Size 34.29K  /  2 Page

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    GS8180Q18D-100 GS8180Q18D-200 GS8180Q18D-200I GS8180Q18D-167 GS8180Q18D-167I GS8180Q18D-133 GS8180Q18D-133I GS8180Q36D-1

GSI[GSI Technology]
Part No. GS8180Q18D-100 GS8180Q18D-200 GS8180Q18D-200I GS8180Q18D-167 GS8180Q18D-167I GS8180Q18D-133 GS8180Q18D-133I GS8180Q36D-133I GS8180Q18D GS8180Q18D-100I GS8180Q36D-100 GS8180Q36D-100I GS8180Q36D-133 8180Q18 8180Q36
OCR Text ...Burst of 2 Read and Write * 1.8 v +150/-100 mv core power supply * 1.5 v or 1.8 v HSTL Interface * Pipelined read operation * Fully coherent read and write pipelines * ZQ mode pin for programmable output drive strength * IEEE 1149.1 JTAG-co...
Description Separate I/O SigmaQuads
18Mb Burst of 2 SigmaQuad SRAM

File Size 594.91K  /  32 Page

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    HVV1012-100

HVVi Semiconductors, Inc.
Part No. Hvv1012-100
OCR Text ...lue ABSOLUTE MAXIMUMvoltage 105 v Parameter Drain-Source RATINGS Unit aBSOLUTE MaXIMUM RaTINGS Symbol DSS value m eli ELECTRICAL CHAR...100 RUGGEDNESS withstanding an device is The device resides in a two-lead metal flanged package ...
Description L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications

File Size 810.16K  /  2 Page

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    GS881E18T-100 GS881E18T-100I GS881E18T-11 GS881E18T-11.5 GS881E18T-11.5I GS881E18T-11I GS881E18T-66 GS881E18T-66I GS881E

GSI[GSI Technology]
Part No. GS881E18T-100 GS881E18T-100I GS881E18T-11 GS881E18T-11.5 GS881E18T-11.5I GS881E18T-11I GS881E18T-66 GS881E18T-66I GS881E18T-80 GS881E18T-80I GS881E36T-80I GS881E18T GS881E36T-100 GS881E36T-100I GS881E36T-11 GS881E36T-11.5 GS881E36T-11.5I GS881E36T-11I GS881E36T-66 GS881E36T-66I GS881E36T-80
OCR Text ...g; even or odd selectable * 3.3 v +10%/-5% core power supply * 2.5 v or 3.3 v I/O supply * LBO pin for Linear or Interleaved Burst mode * In...100-lead TQFP package -11 -11.5 -100 -80 -66 10 ns 10 ns 12.5 ns 15 ns Pipeline tCycle 10 ns 4.0 ns ...
Description 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs

File Size 465.75K  /  34 Page

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    CENTRAL[Central Semiconductor Corp]
Part No. CMMSH1-100 CMMSH1-60 CMMSH1-20 CMMSH1-40
OCR Text ...55 0.70 0.85 100 80 50 30 UNITS v v v A A W C C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS TYP IR IR vF vF vF vF CJ CJ CJ CJ vR=Rated vRRM vR=Rated vRRM, TA=100C IF=1.0A (CMMSH1-20) IF=1.0A (CMMS...
Description From old datasheet system
SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS SCHOTTKY RECTIFIERS

File Size 68.01K  /  2 Page

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    BLF6G38-100 BLF6G38LS-100

NXP Semiconductors
Part No. BLF6G38-100 BLF6G38LS-100
OCR Text ...Hz) 3400 to 3600 vDS PL(Av) (v) 28 (W) 18.5 PL(p) Gp (W) 130 13 D ACPR885k (dBc) ACPR1980k (dBc) -65[2] (dB) (%) 21.5 -...100; BLF6G38LS-100 WiMAX power LDMOS transistor 1.3 Applications I RF power amplifiers for base...
Description WiMAX power LDMOS transistor

File Size 85.46K  /  12 Page

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    PH1516-100

Tyco Electronics
Part No. PH1516-100
OCR Text ...ating collector-base voltage v cm 63 ?,:,, . 1 collector-emittervoltage ( v,,, 1 65 i v i emitter-base voltage i vm i ...100 v2.00 rf test fixture rll 6% v g rl4 cc d int?u i 075 i jumper ii x/4 11 "o ...
Description Wireless Bipolar Power Transistor, 100W 1450 - 1550 MHz
Wireless Bipolar Power Transistor/ 1 OOW 1450 - 1550 MHz

File Size 150.72K  /  2 Page

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