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  v 66 Datasheet PDF File

For v 66 Found Datasheets File :: 50203    Search Time::2.219ms    
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    2SJ486

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ486
OCR Text ...stance R DS(on) = 0.5 typ. (at v GS = -4v, ID = -100 mA) * 2.5v gate drive devices. * Small package (MPAK). Outline MPAK 3 1 D 2...66.6 Gate to source cutoff voltage vGS(off) Static drain to source on state RDS(on) resistance RD...
Description RELAY-.5AMP-DC-6v/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET

File Size 40.30K  /  8 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ...IDSS = -100 A (max) (vDS = -200 v) Enhancement-model: vth = -1.5 ~ -3.5 v (vDS = -10 v, ID = -1 mA) Industrial Applications Unit: mm Maxi...66.7 W 15 3/4 3/4 3/4 3/4 3/4 nC Turn-off time Total gate charge (Gate source plus gate-dr...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSv)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSv)

File Size 237.21K  /  7 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ...nce R DS = 1.1 typ. (vGS = -10 v , I D = -150 mA) R DS = 2.2 typ. (vGS = -4 v , I D = -150 mA) * 4 v gate drive device. * Small package (M...66.6 Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall tim...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SK1083 2SK1083-MR

http://
FUJI[Fuji Electric]
Part No. 2SK1083 2SK1083-MR
OCR Text ...torage Temperature Range Symbol v DS I I I v P T T D D(puls) DR GS D ch stg > Equivalent Circuit Rating 60 8 32 8 20 20 150 -55 ~ +150 ...66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 60v 0,22 2SK1083-MR F-III Series Drai...
Description N-channel MOS-FET

File Size 182.82K  /  2 Page

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    2SK1085-M

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
Part No. 2SK1085-M
OCR Text ...torage Temperature Range Symbol v DS ID I D(puls) I DR v GS PD T ch T stg Rating 150 3 12 3 20 20 150 -55 ~ +150 Unit v A A A v W C C > E...66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 150v 0,9 2SK1085-M F-III Series Drain...
Description N-channel MOS-FET 3 A, 150 v, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 177.09K  /  2 Page

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    2SK1088 2SK1088-M

http://
FUJI[Fuji Electric]
Part No. 2SK1088 2SK1088-M
OCR Text ...torage Temperature Range Symbol v DS ID I D(puls) I DR v GS PD T ch T stg Rating 150 9 36 9 20 35 150 -55 ~ +150 Unit v A A A v W C C > E...66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 150v 0,3 2SK1088-M F-III Series Drain...
Description N-channel MOS-FET

File Size 181.89K  /  2 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ...torage Temperature Range Symbol v DS ID I D(puls) I DR v GS PD T ch T stg Rating 150 6 24 6 20 30 150 -55 ~ +150 Unit v A A A v W C C > E...66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 150v 0,5 2SK1098-M F-III Series Drain...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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    2SK2002-01MR

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2SK2002-01MR
OCR Text ...torage Temperature Range Symbol v DS v DGR ID I D(puls) v GS PD T ch T stg Rating 600 600 3 12 30 30 150 -55 ~ +150 Unit v v A A v W C C ...66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 600v 4,5 2SK2002-01MR FAP-IIA Series ...
Description N-channel MOS-FET

File Size 211.39K  /  2 Page

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    2SK2003-01MR

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2003-01MR
OCR Text ...torage Temperature Range Symbol v DS v DGR ID I D(puls) v GS PD T ch T stg Rating 600 600 4 16 30 40 150 -55 ~ +150 Unit v v A A v W C C ...66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 600v 2,4 2SK2003-01MR FAP-IIA Series ...
Description N-channel MOS-FET

File Size 200.13K  /  2 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1v0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...arge QG = 34 nC TYP. (vDD = 450 v, vGS = 10 v, ID = 10 A) *Gate voltage rating 30 v *Low on-state resistance RDS(on) = 0.75 MAX. (vGS = 10 ...66.7 v v A A W W C C A mJ Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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