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  v-driver Datasheet PDF File

For v-driver Found Datasheets File :: 73276    Search Time::1.407ms    
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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...f*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Sur...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...3.1 0.96 -55 to + 150 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greas...DRIVER ID 13A 19A 30A RG 20V D.U.T IAS tp + V - DD A 0.01 Fig 12a. Unclamped ...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ...1.6 0.02 -55 to + 150 Units V c A W W/C C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Sto...DRIVER RG 20V VGS D.U.T IAS tp + V - DD A 0.01 50 Fig 12a. Unclamped Inductiv...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...rage Temperature Range W W/C V mJ A mJ C h g 730 940 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) 10 lbfyin (1.1...DRIVER 1200 ID 15A 20A BOTTOM 75A TOP RG VGS 20V D.U.T IAS tp + V - DD A 800...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ... TSTG Continuous Drain Current, V GS @ -10V Continuous Drain Current, V GS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation ...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...f*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased ...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounte...Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Rec...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...f*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased ...Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] ***...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...Typ.) IRF530A BVDSS = 100 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo...Driver RG VGS Same Type as DUT VGS VDD * dv/dt controlled by "RG" * IS controlled by Duty ...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...from case ) Units A W W W/C V mJ mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,...Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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For v-driver Found Datasheets File :: 73276    Search Time::1.407ms    
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