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w-cdma n-cdma Datasheet PDF File

For w-cdma n-cdma Found Datasheets File :: 1738 Search Time::1.875ms
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				Freescale Semiconductor... Freescale Semiconductor, Inc
Part No.	MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1
OCR Text	... LIFETIME BUY 880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9060NR1 CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9060NBR1 Table 1...
Description	RF Power Field Effect Transistors
File Size	701.73K / 18 Page	View it Online	Download Datasheet

				Freescale Semiconductor... Freescale Semiconductor, Inc
Part No.	MRF6S9060MBR1 MRF6S9060MR1
OCR Text	...3 - 65 to +150 200 Unit Vdc Vdc W W/C C C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable pr...CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs Table 2. Thermal Characteristics Characteris...
Description	RF Power Field Effect Transistors
File Size	622.45K / 16 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
Part No.	MAX1959 MAX1958 MAX1958ETP MAX1959ETP
OCR Text	w-cdma/n-cdma Cellular Phone HBT PA Management ICs General Description Features o Step-Down Converter Dynamically Adjustable Output Voltage from 0.75V to 3.4V (MAX1958) Dynamically Adjustable Output Voltage from 1V to 3.6V (MAX1959) 800mA...
Description	w-cdma/n-cdma Cellular Phone HBT PA Management ICs
File Size	792.48K / 24 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
Part No.	MAX8504 MAX8500 MAX8500ETC MAX8503ETC MAX8502ETC MAX8501ETC MAX8504ETC MAX8503
OCR Text	w-cdma Handsets General Description Features o Integrated Bypass PFET o 150mV Dropout at 600mA Load (Regardless of External Inductor) o Dynamically Adjustable Output from 0.4V to VBATT o Externally Fixed Output from 1.25V to 2.5V with Dig...
Description	PWM Buck Converters with Bypass FET for n-cdma/w-cdma Handsets
File Size	294.97K / 14 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF5P21240
OCR Text	...Effect Transistor Designed for w-cdma base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications...
Description	2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
File Size	585.82K / 8 Page	View it Online	Download Datasheet

				Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc] 飞思卡尔半导体(中国)有限公司
Part No.	MRF6S27085HSR3 MRF6S27085HR3
OCR Text	...c e l l u l a r r a d i o a n d W L L applications. * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 20 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Cha...
Description	N-Channel Enhancement-Mode Lateral MOSFETs
File Size	353.35K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S9045NBR1 MRF6S9045NR1 MRF6S9045NR108
OCR Text	... LIFETIME BUY 880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9045NR1 CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9045NBR1 Table 1...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	701.09K / 18 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S19100N MRF6S19100NBR1 MRF6S19100NR1
OCR Text	...c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel ...
Description	RF Power Field Effect Transistors
File Size	613.04K / 16 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090LR MRF5S19090L
OCR Text	...tes 40 Nominal. 1990 MHz, 18 W AVG., 2 x n-cdma, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF5S19090L CASE 465A-06, STYLE 1 NI-780S MRF5S19090LSR3 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Sour...
Description	1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
File Size	437.91K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
OCR Text	...e Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l ...
Description	RF Power Field Effect Transistors
File Size	512.68K / 12 Page	View it Online	Download Datasheet

For w-cdma n-cdma Found Datasheets File :: 1738 Search Time::1.875ms
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