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  -12.7-12.7mm Datasheet PDF File

For -12.7-12.7mm Found Datasheets File :: 4893    Search Time::1.593ms    
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    MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM

MAXIM[Maxim Integrated Products]
Part No. MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM
OCR Text ...face. The ADC is available in 8/12/16 inputchannel versions. The octal DAC outputs settle within 2.0s, and the ADC has a 300ksps conversion ...7 to 3.6 4.75 to 5.25 2.7 to 3.6 2.7 to 3.6 4.75 to 5.25 10 10 10 10 10 10 8 8 12 12 16 16 8 8 8 8 8...
Description 10-Bit Multichannel ADCs/DACs with FIFO Temperature Sensing and GPIO Ports
10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports

File Size 1,321.21K  /  47 Page

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    PAQ50S48-1R2 PAQ50S48-1R8 PAQ50S48-2R5 PAQ50S48-3R3 PAQ50S48-5 PAQ100S48 PAQ100S48-1R2 PAQ100S48-1R8 PAQ100S48-2R5 PAQ10

东电?中国)投资有限公司
LAMBDA[DENSEI-LAMBDA]
Part No. PAQ50S48-1R2 PAQ50S48-1R8 PAQ50S48-2R5 PAQ50S48-3R3 PAQ50S48-5 PAQ100S48 PAQ100S48-1R2 PAQ100S48-1R8 PAQ100S48-2R5 PAQ100S48-3R3 PAQ100S48-5
OCR Text ...F control B : with baseplate (H=12.7mm) Power Module Specifications 1. Input voltage range 2. Output voltage adj range 3. Efficiency ...7. Standard functions 8. Options 9. Safety standard 10. Dimensions (W H D) DC48V (DC36 ~ 76V) 1.2V /...
Description Single output DC-DC power module for TELECOM 单输出DC - DC电源模块为电

File Size 86.44K  /  1 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ...using the aluminaceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 1.2 -- -- -...7 2SJ518 Package Dimensions Unit: mm 4.5 0.1 0.4 1.8 max 1.5 0.1 0.44 max f1 ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ...e on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to sour...7 V -6 V -5 V Pulse Test I D (A) Typical Transfer Characteristics -1.0 25 C 75 C -0.6 Tc = -25 C...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text ...e on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to sour...7 105 25 20 8 10 15 40 45 Max -- -- 5 -1 -2.3 3.3 7.9 -- -- -- -- -- -- -- -- Unit V V A A V mS pF...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ576

http://
HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text ...e on the alumina ceramic board (12.5x20x0.7 mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(...
Description Silicon P Channel MOS FET High Speed Switching

File Size 26.18K  /  5 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text ...e on the alumina ceramic board (12.5x 20 x0.7 mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 40.34K  /  8 Page

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    2SJ587

HITACHI[Hitachi Semiconductor]
Part No. 2SJ587
OCR Text ...e on the alumina ceramic board (12.5x 20 x0.7 mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.71K  /  8 Page

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    2SK615

PANASONIC[Panasonic Semiconductor]
Part No. 2SK615
OCR Text ...1 0 0 1 2 3 4 5 6 0 0 4 8 12 16 20 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Gate to source voltage VGS (V) RDS(on) Ta Drain to source ON-resistance RDS(on) () 6 ID=500mA 5 4 VGS=5V 3 10V 2...
Description Silicon N-Channel MOS FET

File Size 34.65K  /  2 Page

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